BCR191_07

BCR191_07

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BCR191_07 - PNP Silicon Digital Transistor - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BCR191_07 数据手册
BCR191... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22 kΩ , R2 = 22 kΩ ) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR191/F BCR191W C 3 R1 R2 1 B 2 E EHA07183 Type BCR191 BCR191F BCR191W 1Pb-containing Marking WOs WOs WOs 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 3=C 3=C 3=C - Package SOT23 TSFP-3 SOT323 package may be available upon special request Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationBCR191, TS ≤ 102°C BCR191F, TS ≤ 128°C BCR191W, TS ≤ 124°C Junction temperature Storage temperature 1 Symbol VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Value 50 50 60 10 100 200 250 250 Unit V mA mW Tj Tstg 150 -65 ... 150 °C 2007-07-31 BCR191... Thermal Resistance Parameter Junction - soldering point1) BCR191 BCR191F BCR191W Symbol RthJS Value ≤ 240 ≤ 90 ≤ 105 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 fT Ccb 50 50 0.8 1 15 0.9 - 22 1 200 3 100 350 0.3 1.5 2.5 29 1.1 - nA µA V kΩ MHz pF calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2Pulse 2 2007-07-31 BCR191... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), IC/IB = 20 1 V 0.8 V CEsat h FE 10 2 0.7 0.6 0.5 0.4 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C 0.3 0.2 0.1 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 -4 10 10 -3 10 -2 A 10 -1 0 -3 10 10 -2 A 10 -1 IC IC Input on Voltage Vi(on) = ƒ(IC ) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 V Vi(off) Vi(on) 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C V -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 0 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 -1 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 -1 IC IC 3 2007-07-31 BCR191... Total power dissipation Ptot = ƒ(TS) BCR191 300 mW Total power dissipation Ptot = ƒ(TS) BCR191F 300 mW 250 225 250 225 P tot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 200 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR191W 300 mW 250 225 Ptot 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 TS 4 2007-07-31 BCR191... Permissible Pulse Load RthJS = ƒ(tp ) BCR191 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR191 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR191F 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR191F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 Ptotmax /PtotDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2007-07-31 BCR191... Permissible Puls Load RthJS = ƒ (tp) BCR191W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR191W 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 2007-07-31 Package SOT23 BCR191... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 7 2007-07-31 Package SOT323 BCR191... Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 8 2007-07-31 Package TSFP-3 BCR191... Package Outline 1.2 ±0.05 10˚ MAX. 0.8 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 0.4 0.45 3 0.55 ±0.04 1 2 0.2 ±0.05 0.4 ±0.05 0.4 ±0.05 0.15 ±0.05 Foot Print 0.4 0.4 Marking Layout (Example) Manufacturer 1.05 Pin 1 BCR847BF Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.3 1.2 1.5 8 0.2 Pin 1 1.35 0.7 9 2007-07-31 BCR191... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2007-07-31
BCR191_07
物料型号: - BCR191:PNP型硅数字晶体管,SOT23封装。 - BCR191F:PNP型硅数字晶体管,TSFP-3封装。 - BCR191W:PNP型硅数字晶体管,SOT323封装。

器件简介: BCR191是一款PNP型硅数字晶体管,适用于开关电路、反相器、接口电路和驱动电路。该器件内置偏置电阻(R1=22kΩ,R2=22kΩ),符合无铅(RoHS合规)封装,并通过了AEC Q101认证。

引脚分配: - BCR191:1=B(基极),2=E(发射极),3=C(集电极)。 - BCR191F:1=B(基极),2=E(发射极),3=C(集电极)。 - BCR191W:1=B(基极),2=E(发射极),3=C(集电极)。

参数特性: - 最大额定值: - 集电极-发射极电压(VCEO):50V - 集电极-基极电压(VCBO):50V - 输入正向电压(Vi(fwd)):60V - 输入反向电压(Vi(rev)):10V - 集电极电流(Ic):100mA - 总功耗(Ptot):BCR191(Ts ≤102°C)200mW,BCR191F(Ts ≤ 128°C)250mW,BCR191W(Ts ≤ 124°C)250mW - 结温(Tj):150℃ - 储存温度(Tstq):-65...150℃

功能详解: BCR191具有低输入电压、高输入阻抗和低功耗的特点,适用于高速开关和驱动应用。其内置的偏置电阻简化了电路设计,减少了外部元件的需求。

应用信息: BCR191适用于需要高速开关和低功耗驱动的应用场合,如开关电源、电机控制和通信设备。

封装信息: - SOT23:小型表面贴装封装,适用于BCR191。 - TSFP-3:薄型小外形封装,适用于BCR191F。 - SOT323:小型表面贴装封装,适用于BCR191W。
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