BCR198S

BCR198.../SEMB2 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47k Ω , R2 = 47kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR198/F/L3 BCR198T/W C 3 BCR198S SEMB2 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR198 BCR198F BCR198L3 BCR198S BCR198T BCR198W SEMB2 Marking WRs WRs WR WRs WRs WRs WR 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-16-2004 BCR198.../SEMB2 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR198, TS ≤ 102°C BCR198F, TS ≤ 128°C BCR198L3, TS ≤ 135°C BCR198S, T S ≤ 115°C BCR198T, TS ≤ 109°C BCR198W, TS ≤ 124°C SEMB2, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR198 BCR198F BCR198L3 BCR198S BCR198T BCR198W SEMB2 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 50 70 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 124 ≤ 300 °C Unit K/W 2 Jun-16-2004 BCR198.../SEMB2 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0,8 1 32 0,9 47 1 100 164 0,3 1,5 3 62 1,1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 V, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0,5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0,3 V Input resistor Resistor ratio - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% fT Ccb - 190 3 - MHz pF 3 Jun-16-2004 BCR198.../SEMB2 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 2 mA h FE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0 0.2 0.4 0.6 V 1 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0 1 2 3 V 5 Vi(on) Vi(off) 4 Jun-16-2004 BCR198.../SEMB2 Total power dissipation Ptot = ƒ(TS) BCR198 300 Total power dissipation Ptot = ƒ(TS) BCR198F 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR198L3 300 Total power dissipation Ptot = ƒ(TS) BCR198S 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 5 Jun-16-2004 BCR198.../SEMB2 Total power dissipation Ptot = ƒ(TS) BCR198T 300 Total power dissipation Ptot = ƒ(TS) BCR198W 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) SEMB2 300 mW Ptot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS 6 Jun-16-2004 BCR198.../SEMB2 Permissible Pulse Load RthJS = ƒ(tp ) BCR198 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR198 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR198F 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR198F 10 3 10 2 Ptotmax /PtotDC RthJS 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 Jun-16-2004 BCR198.../SEMB2 Permissible Puls Load RthJS = ƒ (tp) BCR198L3 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR198L3 10 3 Ptotmax/ P totDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR198S 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR198S 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 Jun-16-2004 BCR198.../SEMB2 Permissible Puls Load RthJS = ƒ (tp) BCR198T 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR198T 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR133W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR198W 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 9 Jun-16-2004 BCR198.../SEMB2 Permissible Puls Load RthJS = ƒ (tp) SEMB2 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SEMB2 10 3 10 2 P totmax/ P totDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 10 Jun-16-2004