BCR199L3

BCR199... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ) BCR199F/L3 BCR199T C 3 R1 1 B 2 E EHA07180 Type Marking Pin Configuration Package BCR199F* BCR199L3* BCR199T* * Preliminary Maximum Ratings Parameter UBs UB UBs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 50 70 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR199F, TS ≤ 128°C BCR199L3, TS ≤ 135°C BCR199T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 ... 150 °C Aug-29-2003 BCR199... Thermal Resistance Parameter Junction - soldering point1) BCR199F BCR199L3 BCR199T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.4 0.5 32 - 47 200 3 100 630 0.3 0.8 1.5 62 kΩ Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0 nA V DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz fT Ccb MHz - 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Aug-29-2003 BCR199... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 -1 A h FE 10 -2 10 2 IC 10 -3 10 1 -4 10 -3 -2 10 10 A 10 -1 10 -4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 -1 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 A 10 -3 hFE 10 -2 IC 10 -4 10 -3 10 -5 10 -4 -1 10 0 1 10 10 V 10 2 10 -6 0 1 2 V 4 Vi(on) Vi(off) 3 Aug-29-2003 BCR199... Total power dissipation Ptot = ƒ(TS) BCR199F 300 Total power dissipation Ptot = ƒ(TS) BCR199L3 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR199T 300 Permissible Puls Load R thJS = ƒ (tp) BCR199F 10 2 mW K/W Ptot 200 10 1 150 100 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 50 RthJS 0 0 20 40 60 80 100 120 °C 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp 4 Aug-29-2003 BCR199... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR199F 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR199L3 10 2 P totmax/P totDC 10 2 RthJS 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR199L3 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR199T 10 3 K/W Ptotmax/ PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS 10 1 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-29-2003 BCR199... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR199T 10 3 P totmax / P totDC 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Aug-29-2003