BCR48

BCR48PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor PNP: R1= 2.2k , R 2 = 47k   5 6 Tape loading orientation Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side EHA07193 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device Type BCR48PN Maximum Ratings Parameter Marking WTs Collector-emitter voltage Collector-base voltage Emitter-base voltage Emitter-base voltage Input on voltage Input on voltage DC collector current DC collector current Junction temperature Storage temperature NPN PNP NPN PNP NPN PNP Total power dissipation, TS = 115 °C   


2 1 3 NPN: R1 = 47k , R2 = 47k VPS05604 C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07176 TR2 R1 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO VEBO Vi(on) Vi(on) IC IC Ptot Tj Tstg Value 50 50 10 5 50 10 70 100 250 150 -65...+150 Unit V mA mW °C 1 Nov-29-2001 BCR48PN Thermal Resistance Junction - soldering point 1) RthJS
140 Values min. typ. max. K/W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics for NPN Type Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Resistor ratio R1 /R2 Input resistor Vi(on) R1 Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO Symbol Unit 50 50 70 0.8 1 32 0.9 47 1 100 164 0.3 1.5 3 62 1.1 V nA µA V - AC Characteristics for NPN Type Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note Thermal Resistance 2) Pulse test: t < 300 s; D < 2% fT Ccb - 100 3 - MHz pF 2 Nov-29-2001
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BCR48PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics for PNP Type Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Resistor ratio AC Characteristics for PNP Type Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 200 MHz R1 /R2 0.042 0.047 0.052 Input resistor Vi(on) Vi(off) hFE Symbol min. V(BR)CEO V(BR)CBO ICBO IEBO 50 50 70 0.4 0.5 1.5 Values typ. 2.2 max. 100 164 0.3 0.8 1.1 2.9 Unit V nA µA V VCEsat 1) Pulse test: t < 300 s; D < 2% 3 Nov-29-2001
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BCR48PN NPN Type DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (I C), hFE = 20 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 2 10 10 10 mA 10 3 10 0 0 0.2 0.4 0.6 V 1 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) 10 2 VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0 1 2 3 V 5 Vi(on) Vi(off) 4 Nov-29-2001 BCR48PN PNP Type DC Current Gain hFE = f (IC) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (I C), hFE = 20 10 2 - mA 2 hFE 10 IC 10 1 10 1 10 0 10 -1 10 0 10 1 mA 10 2 10 0 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage V i(off) = f (I C) VCE = 5V (common emitter configuration) 10 1 mA VCE = 0.3V (common emitter configuration) 10 2 mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 Vi(on) Vi(off) 5 Nov-29-2001 BCR48PN Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 Nov-29-2001