BCV26

BCV26, BCV46 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 3 Type BCV26 BCV46 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS



2 1 VPS05161 Marking FDs FEs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BCV26 30 40 10 BCV46 60 80 10 Unit V IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 360 150 -65 ... 150 mA mW °C
210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-13-2001 BCV26, BCV46 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 0.5 A, VCE = 5 V BCV26 BCV46 BCV26 BCV46 hFE 4000 2000 BCV26 BCV46 hFE 20000 10000 BCV26 BCV46 hFE 10000 4000 hFE 4000 2000 BCV26 BCV46 IEBO BCV26 BCV46 ICBO 10 10 100 ICBO 100 100 BCV26 BCV46 V(BR)EBO BCV26 BCV46 V(BR)CBO 40 80 10 V(BR)CEO 30 60 typ. max. Unit V nA µA nA - 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-13-2001 BCV26, BCV46 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 4.5 fT 200 VBEsat 1.5 VCEsat 1 typ. max. Unit V MHz pF 1) Pulse test: t ≤ 300µs, D = 2% 3 Jul-13-2001 BCV26, BCV46 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BCV 26/46 EHP00291 400 10 CEB0 (CCB0 ) mW pF 300 P tot 250 CCB0 200 5 CEB0 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS 0 10 -1 10 0 V 10 1 V EB0 (V CB0 ) Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCV 26/46 EHP00292 Transition frequency fT = f (IC) VCE = 5V 10 3 fT T BCV 26/46 EHP00294 D= tp T tp MHz 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 10 1 10 2 mA 10 3 ΙC 4 Jul-13-2001 BCV26, BCV46 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 1000 10 3 BCV 26/46 EHP00295 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 1000 10 3 BCV 26/46 EHP00296 ΙC mA 150 ˚C 25 ˚C -50 ˚C ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 0 1.0 2.0 V V BEsat 3.0 10 0 0 0.5 1.0 V V CEsat 1.5 Collector cutoff current ICBO = f (TA) VCB = VCEmax 10 4 nA BCV 26/46 EHP00297 DC current gain hFE = f (I C) VCE = 5V 10 6 h FE 5 BCV 26/46 EHP00298 Ι CBO 10 3 max 10 5 5 10 2 typ 10 1 125 ˚C 25 ˚C -55 ˚C 10 4 5 10 0 0 50 100 ˚C TA 150 10 3 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 5 Jul-13-2001