BCV26, BCV46
PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV27, BCV47 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
3 1
2
Type BCV26 BCV46
Maximum Ratings Parameter Collector-emitter voltage BCV26 BCV46 Collector-base voltage BCV26 BCV46 Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 74 °C Junction temperature Storage temperature
1Pb-containing
Marking FDs FEs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCEO
Value 30 60
Unit V
VCBO 40 80 VEBO IC ICM IB IBM Ptot Tj Tstg 10 500 800 100 200 360 150 -65 ... 150 mW °C mA
package may be available upon special request
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2007-04-20
BCV26, BCV46
Thermal Resistance Parameter Junction - soldering point 1)
1For
Symbol RthJS
Value ≤ 210
Unit K/W
calculation of RthJA please refer to Application Note Thermal Resistance
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BCV26, BCV46
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V
IC = 10 mA, IB = 0 , BCV26 IC = 10 mA, IB = 0 , BCV46
30 60
V(BR)CBO
-
µA
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV26 IC = 100 µA, IE = 0 , BCV46
40 80
V(BR)EBO I CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
10
Collector-base cutoff current
VCB = 30 , IE = 0 , BCV26 VCB = 60 , IE = 0 , BCV46 VCB = 30 , IE = 0 , TA = 150 °C, BCV26 VCB = 60 , IE = 0 , TA = 150 °C, BCV46
I EBO h FE
-
0.1 0.1 10 10 100 nA -
Emitter-base cutoff current
VEB = 4 V, IC = 0
-
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV26 IC = 100 µA, VCE = 1 V, BCV46 IC = 10 mA, VCE = 5 V, BCV26 IC = 10 mA, VCE = 5 V, BCV46 IC = 100 mA, V CE = 5 V, BCV26 IC = 100 mA, V CE = 5 V, BCV46 IC = 0.5 A, VCE = 5 V, BCV26 IC = 0.5 A, VCE = 5 V, BCV46
4000 2000 10000 4000 20000 10000 4000 2000
VCEsat VBEsat
-
1 1.5 V
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA
1Pulse
-
test: t < 300µs; D < 2%
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BCV26, BCV46
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 4.5 pF fT 200 MHz Symbol min. Values typ. max. Unit
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BCV26, BCV46
DC current gain hFE = ƒ(IC) VCE = 5 V
10 6 h FE 5
BCV 26/46 EHP00298
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 1000
10 3
BCV 26/46 EHP00296
ΙC
mA 150 ˚C 25 ˚C -50 ˚C
10 5 5
125 ˚C 25 ˚C
10 2 5
-55 ˚C 10 4 5
10 1 5
10 3 10 -1
10 0
10 1
10 2
mA 10 3
10 0
0
0.5
1.0
V V CEsat
1.5
ΙC
Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 1000
10 3
BCV 26/46 EHP00295
Collector cutoff current ICBO = ƒ(TA) VCB = V CEmax
10 4 nA
BCV 26/46 EHP00297
ΙC
mA 150 ˚C 25 ˚C -50 ˚C
Ι CBO
10 3 max
10 2 5
10 2 typ 10 1
10 1 5
10 0
0
1.0
2.0
V V BEsat
3.0
10 0
0
50
100
˚C TA
150
5
2007-04-20
BCV26, BCV46
Transition frequency fT = ƒ(IC) VCE = 5 V
10 3 fT
BCV 26/46 EHP00294
Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB)
16
pF
MHz
CCB(C EB)
10 2
12
10
8
CEB
5
6
4
CCB
2
10 1 10 0
10 1
10 2
mA
10 3
0 0
4
8
12
16
V
22
ΙC
VCB(VEB)
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp)
400
10 3 Ptot max 5 Ptot DC
BCV 26/46
EHP00292
mW
tp D= T
tp T
300
Ptot
10 2
250
5
200
150
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
100
50
0 0
15
30
45
60
75
90 105 120
°C TS
150
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
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2007-04-20
Package SOT23
BCV26, BCV46
Package Outline
0.15 MIN.
1 ±0.1 0.1 MAX.
1.3 ±0.1
2.9 ±0.1
3
B
2.4 ±0.15
10˚ MAX.
0.4 +0.1 -0.05
1)
1
2
10˚ MAX.
C 0.95 1.9
0.08...0.1
A
5
0...8˚
0.25 M B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
Pin 1
0.9
1.3
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
8
Pin 1
3.15
1.15
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2007-04-20
BCV26, BCV46
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2007-04-20