BCV27, BCV47
NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV26, BCV46 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
3 1
2
Type BCV27 BCV47
Maximum Ratings Parameter Collector-emitter voltage BCV27 BCV47 Collector-base voltage BCV27 BCV47 Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 74 °C Junction temperature Storage temperature
1Pb-containing
Marking FFs FGs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCEO
Value 30 60
Unit V
VCBO 40 80 VEBO IC ICM IB IBM Ptot Tj Tstg 10 500 800 100 200 360 150 -65 ... 150 mW °C mA
package may be available upon special request
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BCV27, BCV47
Thermal Resistance Parameter Junction - soldering point 1)
1For
Symbol RthJS
Value ≤ 210
Unit K/W
calculation of RthJA please refer to Application Note Thermal Resistance
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BCV27, BCV47
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCV27 IC = 10 mA, IB = 0 , BCV47
30 60
V(BR)CBO
-
V µA
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV27 IC = 100 µA, IE = 0 , BCV47
40 80
V(BR)EBO I CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
10
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV27 VCB = 60 V, IE = 0 , BCV47 VCB = 30 V, IE = 0 , TA = 150 °C, BCV27 VCB = 60 V, IE = 0 , TA = 150 °C, BCV47
I EBO h FE
-
0.1 0.1 10 10 100 nA -
Emitter-base cutoff current
VEB = 4 V, IC = 0
-
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV27 IC = 100 µA, VCE = 1 V, BCV47 IC = 10 mA, VCE = 5 V, BCV27 IC = 10 mA, VCE = 5 V, BCV47 IC = 100 mA, V CE = 5 V, BCV27 IC = 100 mA, V CE = 5 V, BCV47 IC = 0.5 A, VCE = 5 V, BCV27 IC = 0.5 A, VCE = 5 V, BCV47
4000 2000 10000 4000 20000 10000 4000 2000
VCEsat VBEsat
-
1 1.5 V
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA
1Pulse
-
test: t < 300µs; D < 2%
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BCV27, BCV47
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 170 MHz Symbol min. Values typ. max. Unit
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BCV27, BCV47
DC current gain hFE = ƒ(IC) VCE = 5 V
10 6 h FE 5
BCV 27/47 EHP00307
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10
10 3
BCV 27/47 EHP00305
Ι C mA
150 ˚C 25 ˚C -50 ˚C
10 5 5
125 ˚C 25 ˚C
10 2 5
-55 ˚C 10 4 5
10 1 5
10 3 10 -1
10 0
10
0
10
1
10
2
mA 10
3
0
0.5
1.0
V V CEsat
1.5
ΙC
Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10
10 3
BCV 27/47 EHP00304
Collector cutoff current ICBO = ƒ(TA) VCB = V CEmax
10 4 nA
BCV 27/47 EHP00306
ΙC
mA 150 ˚C 25 ˚C -50 ˚C
Ι CBO
10 3 max
10 2 5
10 2 typ 10 1
10 1 5
10 0
0
1.0
2.0
V V BEsat
3.0
10 0
0
50
100
˚C TA
150
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BCV27, BCV47
Transition frequency fT = ƒ(IC) VCE = 5 V
10 3 MHz fT
BCV 27/47 EHP00303
Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB)
19
pF
CCB/CEB
10
2
15 13 11
CEB
9
5
7 5 3
CCB
10 1 10 0
10 1
10 2
mA
10 3
1 0
4
8
12
16
V
22
ΙC
VCB/VEB
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp)
400
10 3 Ptot max 5 Ptot DC
BCV 27/47
EHP00301
mW
tp D= T
tp T
300
Ptot
10 2
250
5
200
150
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
100
50
0 0
15
30
45
60
75
90 105 120
°C TS
150
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
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Package SOT23
BCV27, BCV47
Package Outline
0.15 MIN.
1 ±0.1 0.1 MAX.
1.3 ±0.1
2.9 ±0.1
3
B
2.4 ±0.15
10˚ MAX.
0.4 +0.1 -0.05
1)
1
2
10˚ MAX.
C 0.95 1.9
0.08...0.1
A
5
0...8˚
0.25 M B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
Pin 1
0.9
1.3
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
8
Pin 1
3.15
1.15
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BCV27, BCV47
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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