BCV29

BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 2 Type BCV29 BCV49 Maximum Ratings Parameter Collector-emitter voltage BCV29 BCV49 Collector-base voltage BCV29 BCV49 Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 130 °C Junction temperature Storage temperature 1Pb-containing Marking EF EG 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E Package SOT89 SOT89 Symbol VCEO Value 30 60 Unit V VCBO 40 80 VEBO IC ICM IB IBM Ptot Tj Tstg 10 500 800 100 200 1 150 -65 ... 150 W °C mA package may be available upon special request 1 2007-03-29 BCV29, BCV49 Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value ≤ 20 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-03-29 BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 30 60 V(BR)CBO - µA Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV29 IC = 100 µA, IE = 0 , BCV49 40 80 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 10 Collector-base cutoff current VCB = 30 V, IE = 0 , BCV29 VCB = 60 V, IE = 0 , BCV49 VCB = 30 V, IE = 0 , TA = 150 °C, BCV29 VCB = 60 V, IE = 0 , TA = 150 °C, BCV49 I EBO h FE - 0.1 0.1 10 10 100 nA - Emitter-base cutoff current VEB = 4 V, IC = 0 - DC current gain1) IC = 100 µA, VCE = 1 V, BCV29 IC = 100 µA, VCE = 1 V, BCV49 IC = 10 mA, VCE = 5 V, BCV29 IC = 10 mA, VCE = 5 V, BCV49 IC = 100 mA, V CE = 5 V, BCV29 IC = 100 mA, V CE = 5 V, BCV49 IC = 0.5 A, VCE = 5 V, BCV29 IC = 0.5 A, VCE = 5 V, BCV49 4000 2000 10000 4000 20000 10000 4000 2000 VCEsat VBEsat - 1 1.5 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA 1Pulse - test: t < 300µs; D < 2% 3 2007-03-29 BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 150 MHz Symbol min. Values typ. max. Unit 4 2007-03-29 BCV29, BCV49 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE 5 BCV 29/49 EHP00325 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 1000 10 3 BCV 29/49 EHP00322 ΙC 125 ˚C 25 ˚C mA 150 ˚C 25 ˚C -50 ˚C 10 5 5 10 2 5 -55 ˚C 10 4 5 10 1 5 10 3 10 -1 10 0 10 1 10 2 mA 10 3 10 0 0 0.5 1.0 V V CEsat 1.5 ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 1000 10 3 BCV 29/49 EHP00323 Collector cutoff current ICBO = ƒ(TA) VCB = V CEmax 10 4 nA BCV 29/49 EHP00318 ΙC mA 150 ˚C 25 ˚C -50 ˚C Ι CBO 10 3 max 10 2 5 10 2 typ 10 1 10 1 5 10 0 0 1.0 2.0 V V BEsat 3.0 10 0 0 50 100 ˚C TA 150 5 2007-03-29 BCV29, BCV49 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz fT BCV 29/49 EHP00321 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 19 pF CCB/CEB 10 2 15 13 11 CEB 9 5 7 5 3 CCB 10 1 10 0 10 1 10 2 mA 10 3 1 0 4 8 12 16 V 22 ΙC VCB/VEB Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 1200 5 Ptot max Ptot DC 10 2 BCV 29/49 EHP00319 mW D= tp T tp T Ptot 800 5 600 400 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 200 0 0 15 30 45 60 75 90 105 120 °C TS 150 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 tp s 10 0 6 2007-03-29 Package SOT89 BCV29, BCV49 Package Outline 4.5 ±0.1 45˚ 0.25 ±0.05 B 1.5 ±0.1 0.2 MAX. 10˚ MAX. 1) 1.6 ±0.2 2.5 ±0.1 1 ±0.1 4 ±0.25 0.15 1 2 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.2 B 0.15 M B x3 1) Ejector pin markings possible Foot Print 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 8 0.2 1.2 1.0 2.5 Pin 1 2005, June Date code (YM) Manufacturer Pin 1 4.6 12 1 ±0.2 4.3 1.6 7 2.75 +0.1 -0.15 1) 2007-03-29 BCV29, BCV49 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-03-29