BCV48

BCV28, BCV48 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV29, BCV49 (NPN) 1 2 3 Type BCV28 BCV48 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1




2 VPS05162 Marking ED EE 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT89 SOT89 Symbol VCEO VCBO VEBO BCV28 30 40 10 BCV48 60 80 10 Unit V IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 1 150 -65 ... 150 mA W °C Junction - soldering point1) RthJS 20 K/W Jul-12-2001 BCV28, BCV48 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 µA, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 0.5 A, VCE = 5 V BCV28 BCV48 BCV28 BCV48 hFE 4000 2000 BCV28 BCV48 hFE 20000 10000 BCV28 BCV48 hFE 10000 4000 hFE 4000 2000 BCV28 BCV48 IEBO BCV28 BCV48 ICBO 10 10 100 ICBO 100 100 BCV28 BCV48 V(BR)EBO BCV28 BCV48 V(BR)CBO 40 80 10 V(BR)CEO 30 60 typ. max. Unit V nA µA nA - 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-12-2001 BCV28, BCV48 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 4.5 fT 200 VBEsat 1.5 VCEsat 1 typ. max. Unit V MHz pF 1) Pulse test: t ≤ 300µs, D = 2% 3 Jul-12-2001 BCV28, BCV48 Total power dissipation Ptot = f(TS) Collector cutoff current ICBO = f (T A) VCB = V CEmax 10 4 BCV 28/48 EHP00309 1200 mW Ι CBO nA max 10 3 P tot 800 600 10 2 typ 400 10 1 200 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 0 0 50 100 ˚C TA 150 Permissible pulse load Ptotmax / PtotDC = f (tp ) BCV 28/48 EHP00310 Transition frequency fT = f (IC) VCE = 5V 10 3 fT T BCV 28/48 EHP00312 5 Ptot max Ptot DC 10 2 5 D= tp T tp MHz 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 10 1 10 2 mA 10 3 ΙC 4 Jul-12-2001 BCV28, BCV48 Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 1000 10 3 BCV 28/48 EHP00313 Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000 10 3 BCV 28/48 EHP00314 ΙC mA 150 ˚C 25 ˚C -50 ˚C Ι C mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 0 0.5 1.0 V V CEsat 1.5 10 0 0 1.0 2.0 V V BEsat 3.0 Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO ) BCV 28/48 EHP00315 DC current gain hFE = f (I C) VCE = 5V 10 6 h FE 5 BCV 28/48 EHP00316 10 CEB0 (CCB0 ) pF 10 5 CCB0 5 CEB0 125 ˚C 25 ˚C 5 -55 ˚C 10 4 5 0 10 -1 10 0 10 1 V EB0 (V CB0 ) V 10 3 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 5 Jul-12-2001