BCV49

BCV29, BCV49 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV28, BCV48 (PNP) 1 2 3 Type BCV29 BCV49 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1




2 VPS05162 Marking EF EG 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT89 SOT89 Symbol VCEO VCBO VEBO BCV29 30 40 10 BCV49 60 80 10 Unit V IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 1 150 -65 ... 150 mA W °C Junction - soldering point1) RthJS 20 K/W Jul-12-2001 BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 0.5 A, VCE = 5 V BCV29 BCV49 1) Pulse test: t ≤ 300µs, D = 2% Unit max. V typ. V(BR)CEO BCV29 BCV49 V(BR)CBO BCV29 BCV49 V(BR)EBO ICBO BCV29 BCV49 ICBO BCV29 BCV49 IEBO hFE BCV29 BCV49 hFE BCV29 BCV49 hFE BCV29 BCV49 hFE 4000 2000 20000 10000 10000 4000 4000 2000 10 10 100 100 100 40 80 10 30 60 - nA µA nA - 2 Jul-12-2001 BCV29, BCV49 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3.5 fT 150 VBEsat 1.5 VCEsat 1 typ. max. Unit V MHz pF 1) Pulse test: t ≤ 300µs, D = 2% 3 Jul-12-2001 BCV29, BCV49 Total power dissipation Ptot = f(TS) Collector cutoff current ICBO = f (T A) VCB = V CEmax 10 4 nA BCV 29/49 EHP00318 1200 mW Ι CBO 10 3 max P tot 800 600 10 2 typ 400 10 1 200 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 0 0 50 100 ˚C TA 150 Permissible pulse load Ptotmax / PtotDC = f (tp ) BCV 29/49 EHP00319 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT T BCV 29/49 EHP00321 5 Ptot max Ptot DC 10 2 5 D= tp T tp 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 10 1 10 2 mA 10 3 ΙC 4 Jul-12-2001 BCV29, BCV49 Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 1000 10 3 BCV 29/49 EHP00322 Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000 10 3 BCV 29/49 EHP00323 ΙC mA 150 ˚C 25 ˚C -50 ˚C ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 0 0.5 1.0 V V CEsat 1.5 10 0 0 1.0 2.0 V V BEsat 3.0 Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO ) BCV 29/49 EHP00324 DC current gain hFE = f (I C) VCE = 5V 10 6 h FE 5 BCV 29/49 EHP00325 10 CEB0 (CCB0 ) pF 10 5 CCB0 5 CEB0 125 ˚C 25 ˚C 5 -55 ˚C 10 4 5 0 10 -1 10 0 10 V EB0 (V CB0 ) V 1 10 3 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 5 Jul-12-2001