BCV61B

BCV61 NPN Silicon Double Transistor 3 To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage C1 (2) C2 (1) 1For calculation of R thJA please refer to Application Note Thermal Resistance 1




4 2 1 VPS05178 Tr.1 Tr.2 E1 (3) E2 (4) EHA00012 Type BCV61A BCV61B BCV61C Maximum Ratings Parameter Marking 1Js 1Ks 1Ls 1 = C2 1 = C2 1 = C2 Pin Configuration 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 = E2 Package SOT143 SOT143 SOT143 Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg Value 30 30 6 100 200 200 300 150 -65 ... 150 Unit V Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collector current Base peak current (transistor T1) Total power dissipation, TS = 99 °C Junction temperature Storage temperature Thermal Resistance mA mW °C Junction - soldering point1) RthJS 170 K/W Jul-10-2001 BCV61 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 0.1 mA, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V BCV61A BCV61B BCV61C VCEsat VBEsat VBE(ON) 580 660 700 770 700 900 90 200 250 600 hFE 110 200 420 180 290 520 220 450 800 hFE 100 ICBO 5 ICBO 15 V(BR)EBO 6 V(BR)CBO 30 V(BR)CEO 30 typ. max. Unit V nA µA - Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V mV 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-10-2001 BCV61 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Base-emitter forward voltage IE = 10 µA IE = 250 mA Matching of transistor T1 and transistor T2 at IE2 = 0.5mA and VCE1 = 5V TA = 25 °C TA = 150 °C Thermal coupling of transistor T1 and transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1 AC characteristics for transistor T1 Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k , Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm Symbol min. VBES 0.4 IC1 / IC2 0.7 0.7 IE2 - Values typ. max. Unit V 5 1.8 1.3 1.3 mA fT Ccb Ceb F - 250 3 8 2 - MHz pF dB h12e h21e h22e 100 - 2 30 900 - 10-4 S 3 Jul-10-2001  Open-circuit output admittance
 f = 1 kHz, f = 200 Hz
h11e - 4.5 - k BCV61 Test circuit for current matching A Ι C1 2 1 VCE1 ... T1 T2 Ι E2 = constant 3 VCO 4 VCO EHN00001 Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV Characteristic for determination of V CE1 at specified R E range with I E2 as parameter under condition of I C1/I E2 = 1.3 A Ι C1 2 1 VCE1 ... T1 T2 Ι E2 = constant 3 RE 4 RE EHN00002 Note: BCV61 with emitter resistors 4 Jul-10-2001 BCV61 Total power dissipation Ptot = f(TS) Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 Ptot max 5 Ptot DC BCV 61 EHP00942 350 mW D= tp T tp T 250 P tot 10 2 5 200 150 10 1 100 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 5 Jul-10-2001