BCV61_07

BCV61_07

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BCV61_07 - NPN Silicon Double Transistor - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BCV61_07 数据手册
BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 C1 (2) C2 (1) 3 2 4 1 Tr.1 Tr.2 E1 (3) E2 (4) EHA00012 Type BCV61 BCV61B BCV61C Maximum Ratings Parameter Marking 1Js 1Ks 1Ls 1 = C2 1 = C2 1 = C2 Pin Configuration 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 = E2 Package SOT143 SOT143 SOT143 Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg Value 30 30 6 100 200 200 300 150 -65 ... 150 Unit V Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collector current Base peak current (transistor T1) Total power dissipation, TS = 99 °C Junction temperature Storage temperature mA mW °C 1Pb-containing package may be available upon special request 1 2007-08-09 BCV61 Thermal Resistance Electrical Characteristics at TA = 25°C, unless otherwise specified RthJS ≤170 Junction - soldering point1) Parameter Symbol Values min. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain2) IC = 0.1 mA, VCE = 5 V DC current gain2) IC = 2 mA, VCE = 5 V BCV61A BCV61B BCV61C VCEsat VBEsat VBE(ON) 580 660 700 770 700 900 90 200 250 600 h FE 110 200 420 180 290 520 220 450 800 mV h FE 100 I CBO 5 µA I CBO 15 nA V(BR)EBO 6 V(BR)CBO 30 V(BR)CEO 30 V typ. max. K/W Unit Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage2) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 2Puls test: t ≤ 300 µs, D = 2% 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 2007-08-09 BCV61 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Base-emitter forward voltage IE = 10 µA IE = 250 mA Matching of transistor T1 and transistor T2 at IE2 = 0.5mA and VCE1 = 5V TA = 25 °C TA = 150 °C Thermal coupling of transistor T1 and transistor T2 1) T1: V CE = 5V Maximum current of thermal stability of I C1 AC characteristics for transistor T1 Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure I C = 200 µA, V CE = 5 V, R S = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz Short-circuit input impedance I C = 1 mA, V CE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio I C = 1 mA, V CE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio I C = 1 mA, V CE = 10 V, f = 1 kHz Open-circuit output admittance I C = 1 mA, V CE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm Symbol min. VBES 0.4 IC1 / IC2 0.7 0.7 IE2 - Values typ. max. Unit V 5 1.8 1.3 1.3 mA fT Ccb Ceb F - 250 0.95 9 2 - MHz pF dB h11e h12e h21e h22e 100 - 4.5 2 30 900 - kΩ 10 -4 µS 3 2007-08-09 BCV61 Test circuit for current matching A Ι C1 2 1 VCE1 ... T1 T2 Ι E2 = constant 3 VCO 4 VCO EHN00001 Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1/IE2 = 1.3 A Ι C1 2 1 VCE1 ... T1 T2 Ι E2 = constant 3 RE 4 RE EHN00002 Note: BCV61 with emitter resistors 4 2007-08-09 BCV61 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 12 pF Total power dissipation Ptot = f(TS) 350 mW 10 CCB(C EB) 9 250 7 6 5 4 3 2 1 0 0 4 8 12 16 V CCB P tot 200 150 CEB 8 100 50 22 0 0 15 30 45 60 75 90 105 120 VCB(VEB) °C 150 TS Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 Ptot max 5 Ptot DC BCV 61 EHP00942 D= tp T tp T 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 5 2007-08-09 Package SOT143 BCV61 Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 6 2007-08-09 BCV61 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-08-09
BCV61_07
### 物料型号 - 型号:BCV61 - 封装:SOT143

### 器件简介 BCV61是一款NPN硅双晶体管,具有以下特点: - 可用作电流镜像。 - 良好的热耦合和VBE匹配。 - 高电流增益。 - 低集电极-发射极饱和电压。 - 无铅(符合RoHS标准)封装。 - 符合AEC Q101标准。

### 引脚分配 | 类型 | 标记 | 引脚配置 | 封装 | | --- | --- | --- | --- | | BCV61 | 1Js | 1=C2, 2=C1, 3=E1, 4=E2 | SOT143 | | BCV61B | W 1Ks | 1=C2, 2=C1, 3=E1, 4=E2 | SOT143 | | BCV61C | 1Ls | 1=C2, 2=C1, 3=E1, 4=E2 | SOT143 |

### 参数特性 - 最大额定值: - 集电极-发射极电压(晶体管T1):30V - 集电极-基极电压(开路发射极)(晶体管T1):30V - 发射极-基极电压:6V - DC集电极电流:100mA - 峰值集电极电流:200mA - 基极峰值电流(晶体管T1):200mA - 总功耗散,Ts = 99°C:300mW - 结温:150°C - 存储温度:-65...150°C

### 功能详解 - 电气特性(在TA = 25°C,除非另有说明): - 集电极-发射极击穿电压:30V - 集电极-基极击穿电压:30V - 发射极-基极击穿电压:6V - 集电极截止电流:15nA - DC电流增益:100至800,取决于型号 - 集电极-发射极饱和电压:90至600mV,取决于电流和型号 - 基极-发射极饱和电压:700至900mV - 基极-发射极电压:580至770mV

### 应用信息 BCV61适用于需要高电流增益和良好热耦合的应用,如音频放大器、开关电源等。

### 封装信息 - 封装类型:SOT143 - 封装尺寸:符合RoHS标准的无铅封装。
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