BCW61

BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN)




3 2 1 VPS05161 Type BCW 61A BCW 61B BCW 61C BCW 61D BCW 61FF BCW 61FN BCX 71G BCX 71H BCX 71J BCX 71K Marking BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Jul-10-2001 BCW61, BCX71 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Peak base current Total power dissipation , TS = 71 °C Junction temperature Storage temperature Thermal Resistance Symbol VCEO VCBO VEBO IC ICM IBM Ptot Tj Tstg BCW61 BCW61FF 32 32 5 32 32 5 100 200 200 330 150 -65 ... 150 BCX71 Unit 45 45 5 mA mA mW °C V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application Note Thermal Resistance V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 - BCW61/61FF BCX71 BCW61/61FF BCX71 2
Junction - soldering point1) RthJS 240 K/W Unit max. V typ. Jul-10-2001 BCW61, BCX71 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C BCW61/61FF VCB = 45 V, IE = 0 , TA = 150 °C BCX71 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 µA, VCE = 5 V hFE-grp. A/G hFE-grp. B/H hFE-grp. C/J/FF hFE-grp. D/K/FN BCW61/61FF BCX71 Unit max. nA typ. ICBO ICBO IEBO hFE 20 30 40 100 hFE hFE-grp. A/G hFE-grp. B/H hFE-grp. C/J/FF hFE-grp. D/K/FN - 20 20 µA 20 20 20 nA - - 140 200 300 460 - DC current gain 1) IC = 2 mA, VCE = 5 V 120 180 250 380 hFE 170 250 350 500 220 310 460 630 DC current gain 1) IC = 50 mA, VCE = 1 V hFE-grp. A/G hFE-grp. B/H hFE-grp. C/J/FF hFE-grp. D/K/FN 60 80 100 110 - - 1) Pulse test: t ≤=300µs, D = 2% 3 Jul-10-2001 BCW61, BCX71 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter voltage 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz A/G B/H C/J/FF D/K/FN Symbol min. VCEsat VBEsat VBE(ON) 0.55 - Values typ. max. Unit V 0.12 0.2 0.7 0.83 0.52 0.65 0.78 0.25 0.55 0.85 1.05 0.75 - fT Ccb Ceb hFE-grp. h11e - 250 3 8 - MHz pF - 2.7 3.6 4.5 7.5 - Open-circuit reverse voltage transf.ratio hFE-grp. h12e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G B/H C/J/FF D/K/FN 10-4 1.5 2 2 3 - 1) Pulse test: t ≤=300µs, D = 2% 4 Jul-10-2001
Short-circuit input impedance k BCW61, BCX71 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC Characteristics Symbol min. Values typ. max. 200 260 330 520 S Unit Short-circuit forward current transf.ratio hFE-grp. h21e A/G IC = 2 mA, VCE = 5 V, f = 1 kHz B/H C/J/FF D/K/FN IC = 2 mA, VCE = 5 V, f = 1 kHz A/G B/H C/J/FF D/K/FN - 18 24 30 50 - Noise figure IC = 200 µA, VCE = 5 V, RS = 1 k , f = 1 kHz, f = 200 Hz hFE-grp. F A/K FF/FN hFE-grp. Vn - 2 1 - 2 0.11 µV Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 ... 50 Hz FF/FN 5 Jul-10-2001
Open-circuit output admittance hFE-grp. h22e dB    BCW61, BCX71 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 12 CCBO pF (C EBO) 10 BCW 61/BCX 71 EHP00344 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 8 CEBO 6 4 CCBO 2 °C 150 TS 0 10 -1 10 0 10 1 V CBO (V EBO ) V Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCW 61/BCX 71 EHP00345 VCE = 5V 10 3 fT T BCW 61/BCX 71 EHP00347 tp D= T tp MHz 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC 6 Jul-10-2001 BCW61, BCX71 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 40 10 2 BCW 61/BCX 71 EHP00348 IC = f (VCEsat), h FE = 40 10 2 BCW 61/BCX 71 EHP00349 ΙC mA 100 ˚C 25 ˚C -50 ˚C ΙC mA 100 ˚C 25 ˚C -50 ˚C 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 0.8 V V BE sat 1.2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 V CEsat Collector current IC = f (VBE) DC current gain hFE = f (I C) VCE = 5V 10 2 BCW 61/BCX 71 EHP00350 VCE = 5V 10 3 h FE 5 BCW 61/BCX 71 EHP00351 Ι C mA 10 1 5 100 ˚C 25 ˚C 10 2 5 -50 ˚C 10 5 0 10 1 10 -1 5 100 ˚C 25 ˚C -50 ˚C 5 10 -2 0 0.5 V V BE 1.0 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 ΙC 7 Jul-10-2001 BCW61, BCX71 Collector cutoff current ICBO = f (TA) h parameter he = f (IC) normalized VCB = VCEmax 10 4 nA BCW 61/BCX 71 EHP00352 VCE = 5V 10 2 he BCW 61/BCX 71 EHP00353 Ι CBO 10 3 10 2 max 10 5 1 h 11e V CE = 5 V 10 1 h 12e 10 0 10 0 typ 5 h 21e h 22e 10 -1 0 50 100 TA C 150 10 -1 10 -1 5 10 0 mA 10 1 ΙC h parameter he = f (VCE ) normalized Noise figure F = f (V CE) 2.0 he 1.5 BCW 61/BCX 71 EHP00354 20 F dB 15 BCW 61/BCX 71 Ι C = 2 mA h 11 1.0 h 12 10 0.5 h 22 5 0 0 10 20 V VCE 30 0 10 -1 10 0 8
IC = 2mA IC = 0.2mA, R S = 2k , f = 1kHz EHP00355 10 1 V VCE 10 2 Jul-10-2001 BCW61, BCX71 Noise figure F = f (f) Noise figure F = f (IC) 20 F dB 15 BCW 61/BCX 71 10 5 0 10 -2 10 -1 10 0 Noise figure F = f (IC ) VCE = 5V, f = 1kHz 20 F dB 15 BCW 61/BCX 71 EHP00358 RS = 1 MΩ 100 k Ω 10 kΩ 10 1k Ω 5 500 Ω 0 10 -3 10 -2 10 -1
EHP00356 IC = 0.2mA, VCE = 5V, RS = 2k VCE = 5V, f = 120Hz BCW 61/BCX 71 EHP00357 20 F dB 15 RS = 1 MΩ 100 k Ω 10 k Ω 10 500 Ω 5 1 kΩ 10 1 kHz 10 2 f 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC Noise figure F = f (IC) VCE = 5V, f = 10kHz 20 F dB 15 RS = 1 MΩ 100 k Ω BCW 61/BCX 71 EHP00359 10 500 Ω 10 k Ω 5 1 kΩ 10 0 mA 10 1 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC 9 Jul-10-2001