BCW61A_07

BCW61..., BCX71... PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type BCW61A BCW61B BCW61C BCW61D BCX71G BCX71H BCX71J BCX71K 1Pb-containing Marking BAs BBs BCs BDs BGs BHs BJs BKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 package may be available upon special request 1 2007-10-18 BCW61..., BCX71... Maximum Ratings Parameter Collector-emitter voltage BCW61... BCX71... Collector-base voltage BCW61... BCX71... Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipationTS ≤ 71 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol VCEO Value 32 45 Unit V VCBO 32 45 VEBO IC ICM IBM Ptot Tj Tstg Symbol RthJS 5 100 200 200 330 150 -65 ... 150 Value ≤ 240 mW °C Unit K/W mA calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-10-18 BCW61..., BCX71... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCW61... IC = 10 mA, IB = 0 , BCX71... 32 45 V(BR)CBO - µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BCW61... IC = 10 µA, IE = 0 , BCX71... 32 45 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 1 µA, IC = 0 5 Collector-base cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 VCB = 32 V, IE = 0 , TA = 150 °C, BCW61... VCB = 45 V, IE = 0 , TA = 150 °C, BCX71... I EBO h FE - 0.02 0.02 20 20 20 nA - Emitter-base cutoff current VEB = 4 V, IC = 0 - DC current gain1) IC = 10 µA, VCE = 5 V, hFE-grp. A/G IC = 10 µA, VCE = 5 V, hFE-grp. B/H IC = 10 µA, VCE = 5 V, hFE-grp. C/J IC = 10 µA, VCE = 5 V, hFE-grp. D/K IC = 2 mA, VCE = 5 V, hFE-grp. A/G IC = 2 mA, VCE = 5 V, hFE-grp. B/H IC = 2 mA, VCE = 5 V, hFE-grp. C/J IC = 2 mA, VCE = 5 V, hFE-grp. D/K IC = 50 mA, VCE = 1 V, hFE-grp. A/G IC = 50 mA, VCE = 1 V, hFE-grp. B/H IC = 50 mA, VCE = 1 V, hFE-grp. C/J IC = 50 mA, VCE = 1 V, hFE-grp. D/K 20 30 40 100 120 180 250 380 60 80 100 110 140 200 300 460 170 250 350 500 - 220 310 460 630 - 3 2007-10-18 BCW61..., BCX71... DC Electrical Characteristics Parameter Characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA VCEsat Symbol min. Values typ. max. Unit V 0.12 0.2 0.7 0.83 0.52 0.65 0.78 0.25 0.55 0.85 1.05 0.75 - Base emitter saturation voltage 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA VBEsat VBE(ON) Base-emitter voltage1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V 1Pulse 0.55 - test: t < 300µs; D < 2% 4 2007-10-18 BCW61..., BCX71... AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT Ccb Ceb h 11e - 250 1.5 8 - MHz pF Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K kΩ 2.7 3.6 4.5 7.5 1.5 2 2 3 200 260 330 520 18 24 30 50 2 10-4 µS dB Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K h 12e Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K h 21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. A/B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/H IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/J IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. D/K h 22e Noise figure IC = 200 µA, VCE = 5 V, f = 1 kHz, F - ∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. A/K 5 2007-10-18 BCW61..., BCX71... DC current gain hFE = ƒ(IC) VCE = 5 V 10 3 h FE 5 BCW 61/BCX 71 EHP00351 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 40 10 2 BCW 61/BCX 71 EHP00349 100 ˚C 25 ˚C ΙC mA 100 ˚C 25 ˚C -50 ˚C 10 2 5 -50 ˚C 10 1 5 10 1 5 10 0 5 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 ΙC V CEsat Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 40 10 2 BCW 61/BCX 71 EHP00348 Collector current I C = ƒ(V BE) VCE = 5 V 10 2 BCW 61/BCX 71 EHP00350 ΙC mA 100 ˚C 25 ˚C -50 ˚C Ι C mA 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 5 100 ˚C 25 ˚C -50 ˚C 10 -1 0 0.2 0.4 0.6 0.8 V V BE sat 1.2 10 -2 0 0.5 V V BE 1.0 6 2007-10-18 BCW61..., BCX71... Collector cutoff current ICBO = ƒ(TA) VCB = V CEmax 10 4 nA BCW 61/BCX 71 EHP00352 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 fT MHz 5 BCW 61/BCX 71 EHP00347 Ι CBO 10 3 10 2 max 10 2 10 1 5 typ 10 0 10 -1 0 50 100 TA C 150 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 12 pF Total power dissipation Ptot = ƒ(TS) 360 mW 300 270 10 CCB(CEB ) 9 7 6 5 4 3 2 1 0 0 4 8 12 16 V CCB CEB Ptot 8 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 22 VCB(VEB) °C 150 TS 7 2007-10-18 BCW61..., BCX71... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptot max 5 Ptot DC BCW 61/BCX 71 EHP00345 h parameter he = ƒ(IC) normalized VCE = 5V 10 2 he T BCW 61/BCX 71 EHP00353 D= tp T tp 10 2 5 10 5 1 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 5 1 h 11e V CE = 5 V h 12e 10 5 h 21e h 22e 0 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 10 -1 5 10 0 mA 10 1 ΙC h parameter he = ƒ(VCE ) normalized IC = 2mA BCW 61/BCX 71 EHP00354 Noise figure F = ƒ(VCE) IC = 0.2mA, R S = 2kΩ , f = 1kHz BCW 61/BCX 71 EHP00355 2.0 he 1.5 20 F dB 15 Ι C = 2 mA h 11 1.0 h 12 10 0.5 h 22 5 0 0 10 20 V VCE 30 0 10 -1 10 0 10 1 V VCE 10 2 8 2007-10-18 BCW61..., BCX71... Noise figure F = ƒ(f) VCE = 5V, ZS = ZSopt BCW 61/BCX 71 EHP00356 Noise figure F = ƒ(I C) VCE = 5V, f = 120Hz BCW 61/BCX 71 EHP00357 20 F dB 15 20 F dB 15 RS = 1 MΩ 100 k Ω 10 k Ω 10 10 500 Ω 5 5 1 kΩ 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC Noise figure F = ƒ(IC ) VCE = 5V, f = 1kHz 20 F dB 15 BCW 61/BCX 71 EHP00358 Noise figure F = ƒ(I C) VCE = 5V, f = 10kHz 20 F dB 15 RS = 1 MΩ 100 k Ω BCW 61/BCX 71 EHP00359 RS = 1 MΩ 100 k Ω 10 kΩ 10 1k Ω 10 500 Ω 10 k Ω 5 500 Ω 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC 9 2007-10-18 Package SOT23 BCW61..., BCX71... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 10 2007-10-18 BCW61..., BCX71... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2007-10-18