BCW66F_07

BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary type: BCW68 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* * Shrinked chip version Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 79 °C, BCW66 TS ≤ 115 °C, BCW66K Junction temperature Storage temperature 1Pb-containing Marking EFs EFs EGs EGs EHs EHs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Value 45 75 5 800 1 100 200 Unit V mA A mA mW 330 500 Tj Tstg 150 -65 ... 150 °C package may be available upon special request 1 2007-04-20 BCW66 Thermal Resistance Parameter Junction - soldering point1) BCW66 BCW66K Symbol RthJS Value ≤ 215 ≤ 70 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 45 V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO 75 5 - µA Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C I EBO h FE - 0.02 20 20 nA - Emitter-base cutoff current VEB = 5 V, IC = 0 - DC current gain2) IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H IC = 100 mA, V CE = 1 V, hFE-grp.F IC = 100 mA, V CE = 1 V, hFE-grp.G IC = 100 mA, V CE = 1 V, hFE-grp.H IC = 500 mA, V CE = 1 V, hFE-grp.F, G, H 75 110 180 100 160 250 40 VCEsat 160 250 350 - 250 400 630 V Collector-emitter saturation voltage2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat - 0.3 0.45 1.25 1.25 Base emitter saturation voltage2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA 1For 2Pulse - calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2 2007-04-20 BCW66 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, BCW66 VCB = 10 V, f = 1 MHz, BCW66K Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, BCW66 VEB = 0.5 V, f = 1 MHz, BCW66K Ceb 60 40 Ccb 6 3 pF fT 170 MHz Symbol min. Values typ. max. Unit 3 2007-04-20 BCW66 DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 5 BCW 65/66 EHP00396 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 3 mA BCW 65/66 EHP00395 100 ˚C h FE 25 ˚C 10 2 5 -50 ˚C ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C 10 1 5 10 1 5 10 0 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 mA 10 3 10 -1 0 200 400 600 mV 800 VCE sat ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 3 mA BCW 65/66 EHP00394 Collector cutoff current ICBO = ƒ(TA) VCB = V CEmax 10 5 nA BCW 65/66 EHP00393 ΙC 10 5 2 150 ˚C 25 ˚C -50 ˚C Ι CB0 10 4 5 10 3 10 5 1 5 10 2 5 max 10 5 0 typ 10 5 1 10 -1 0 1 2 3 V VBE sat 4 10 0 0 50 100 ˚C TA 150 4 2007-04-20 BCW66 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz fT 5 60 BCW 65/66 EHP00391 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) BCW66: - - - , BCW66K: ____ 75 pF V CB/V EB 55 50 45 40 35 30 CEB: BCW66 CEB: BCW66K CCB: BCW66 CCB: BCW66K 10 2 5 25 20 15 10 5 10 1 10 0 10 1 10 2 mA 10 3 0 0 2 4 6 8 10 12 14 16 V 20 ΙC CCB/C EB Total power dissipation Ptot = ƒ(TS) BCW66: - - - , BCW66K: ____ Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptot max 5 Ptot DC BCW 65/66 EHP00392 550 mW 450 400 tp D= T tp T BCW66K BCW66 Ptot 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 °C TS 150 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 5 2007-04-20 Package SOT23 BCW66 Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 6 2007-04-20 BCW66 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-20