BCW67, BCW68
PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
3 1
2
Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H
1Pb-containing
Marking DAs DBs DCs DFs DGs DHs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
package may be available upon special request
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BCW67, BCW68
Maximum Ratings Parameter Collector-emitter voltage BCW67 BCW68 Collector-base voltage BCW67 BCW68 Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS ≤ 79°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1)
1For
Symbol VCEO
Value 32 45
Unit V
VCBO 45 60 VEBO IC ICM IB IBM Ptot Tj Tstg Symbol RthJS 5 800 1 100 200 330 150 -65 ... 150 Value ≤ 215 Unit K/W mW °C mA A mA
calculation of RthJA please refer to Application Note Thermal Resistance
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BCW67, BCW68
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V
IC = 10 mA, IB = 0 , BCW67 IC = 10 mA, IB = 0 , BCW68
32 45
V(BR)CBO
-
µA
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BCW67 IC = 10 µA, IE = 0 , BCW68
45 60
V(BR)EBO I CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
5
Collector-base cutoff current
VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 VCB = 32 V, IE = 0 , TA = 150 °C; BCW67 VCB = 45 V, IE = 0 , TA = 150 °C; BCW68
I EBO h FE
-
0.02 0.02 20 20 20 nA -
Emitter-base cutoff current
VEB = 4 V, IC = 0
-
DC current gain1)
IC = 100 µA, VCE = 10 V, hFE-grp.A/F IC = 100 µA, VCE = 10 V, hFE-grp.B/G IC = 100 µA, VCE = 10 V, hFE-grp.C/H IC = 10 mA, VCE = 1 V, hFE-grp.A/F IC = 10 mA, VCE = 1 V, hFE-grp.B/G IC = 10 mA, VCE = 1 V, hFE-grp.C/H IC = 100 mA, V CE = 1 V, h FE-grp.A/F IC = 100 mA, V CE = 1 V, h FE-grp.B/G IC = 100 mA, V CE = 1 V, h FE-grp.C/H IC = 500 mA, V CE = 2 V, h FE-grp.A/F IC = 500 mA, V CE = 2 V, h FE-grp.B/G IC = 500 mA, V CE = 2 V, h FE-grp.C/H
35 50 80 75 120 180 100 160 250 35 60 100
160 250 350 -
250 400 630 -
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BCW67, BCW68
DC Electrical Characteristics Parameter Characteristics Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat
Symbol min.
Values typ. max.
Unit
V 0.3 0.7 1.25 2
Base emitter saturation voltage 1)
IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA
VBEsat
-
AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz
1Pulse
fT Ccb Ceb
-
200 6 60
-
MHz pF
test: t < 300µs; D < 2%
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BCW67, BCW68
DC current gain hFE = ƒ(IC) VCE = 1 V
10 3 5
BCW 67/68 EHP00403
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10
10 3 mA
BCW 67/68 EHP00402
100 ˚C 25 ˚C
h FE
ΙC
10 2 5
150 ˚C 25 ˚C -50 ˚C
10 2 -50 ˚C 5
10 1 5
10 1 5
10 5
0
10 0 10 -1
5 10 0
5 10 1
5 10 2
mA 10 3
10 -1 0
200
400
600 mV 800 VCE sat
ΙC
Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10
10 3 mA
BCW 67/68 EHP00401
Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V
10 5 nA
BCW 67/68 EHP00400
ΙC
10 5
2
150 ˚C 25 ˚C -50 ˚C
Ι CB0
10 4 5 10 3
10 5
1
5 10 2 5
max
10
0
typ 10
1
5
5
10 -1
0
1
2
3
V
4
10 0
0
50
100
˚C TA
150
VBE sat
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BCW67, BCW68
Transition frequency fT = ƒ(IC) VCE = 5 V
10 3 MHz
BCW 67/68 EHP00398
Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB)
65 pF 55
fT
5
CCB/C EB
50 45 40 35 30
10 2
5
25 20 15 10 5
CCB CEB
10 1 10 0
5 10 1
5
10 2
mA 10 3
0 0
2
4
6
8
10
12
14
16
V
20
ΙC
VCB/VEB
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp)
550
10 3 Ptot max 5 Ptot DC
BCW66K BCW66
BCW 67/68
EHP00399
mW
450 400
D=
tp T
tp T
Ptot
350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
°C TS
150
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
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Package SOT23
BCW67, BCW68
Package Outline
0.15 MIN.
1 ±0.1 0.1 MAX.
1.3 ±0.1
2.9 ±0.1
3
B
2.4 ±0.15
10˚ MAX.
0.4 +0.1 -0.05
1)
1
2
10˚ MAX.
C 0.95 1.9
0.08...0.1
A
5
0...8˚
0.25 M B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
Pin 1
0.9
1.3
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
8
Pin 1
3.15
1.15
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2007-04-20
BCW67, BCW68
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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