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BCW67_07

BCW67_07

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BCW67_07 - PNP Silicon AF Transistors - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BCW67_07 数据手册
BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H 1Pb-containing Marking DAs DBs DCs DFs DGs DHs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 package may be available upon special request 1 2007-04-20 BCW67, BCW68 Maximum Ratings Parameter Collector-emitter voltage BCW67 BCW68 Collector-base voltage BCW67 BCW68 Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS ≤ 79°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol VCEO Value 32 45 Unit V VCBO 45 60 VEBO IC ICM IB IBM Ptot Tj Tstg Symbol RthJS 5 800 1 100 200 330 150 -65 ... 150 Value ≤ 215 Unit K/W mW °C mA A mA calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-20 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCW67 IC = 10 mA, IB = 0 , BCW68 32 45 V(BR)CBO - µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BCW67 IC = 10 µA, IE = 0 , BCW68 45 60 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 VCB = 32 V, IE = 0 , TA = 150 °C; BCW67 VCB = 45 V, IE = 0 , TA = 150 °C; BCW68 I EBO h FE - 0.02 0.02 20 20 20 nA - Emitter-base cutoff current VEB = 4 V, IC = 0 - DC current gain1) IC = 100 µA, VCE = 10 V, hFE-grp.A/F IC = 100 µA, VCE = 10 V, hFE-grp.B/G IC = 100 µA, VCE = 10 V, hFE-grp.C/H IC = 10 mA, VCE = 1 V, hFE-grp.A/F IC = 10 mA, VCE = 1 V, hFE-grp.B/G IC = 10 mA, VCE = 1 V, hFE-grp.C/H IC = 100 mA, V CE = 1 V, h FE-grp.A/F IC = 100 mA, V CE = 1 V, h FE-grp.B/G IC = 100 mA, V CE = 1 V, h FE-grp.C/H IC = 500 mA, V CE = 2 V, h FE-grp.A/F IC = 500 mA, V CE = 2 V, h FE-grp.B/G IC = 500 mA, V CE = 2 V, h FE-grp.C/H 35 50 80 75 120 180 100 160 250 35 60 100 160 250 350 - 250 400 630 - 3 2007-04-20 BCW67, BCW68 DC Electrical Characteristics Parameter Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat Symbol min. Values typ. max. Unit V 0.3 0.7 1.25 2 Base emitter saturation voltage 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1Pulse fT Ccb Ceb - 200 6 60 - MHz pF test: t < 300µs; D < 2% 4 2007-04-20 BCW67, BCW68 DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 5 BCW 67/68 EHP00403 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 3 mA BCW 67/68 EHP00402 100 ˚C 25 ˚C h FE ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C 10 2 -50 ˚C 5 10 1 5 10 1 5 10 5 0 10 0 10 -1 5 10 0 5 10 1 5 10 2 mA 10 3 10 -1 0 200 400 600 mV 800 VCE sat ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 3 mA BCW 67/68 EHP00401 Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 10 5 nA BCW 67/68 EHP00400 ΙC 10 5 2 150 ˚C 25 ˚C -50 ˚C Ι CB0 10 4 5 10 3 10 5 1 5 10 2 5 max 10 0 typ 10 1 5 5 10 -1 0 1 2 3 V 4 10 0 0 50 100 ˚C TA 150 VBE sat 5 2007-04-20 BCW67, BCW68 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz BCW 67/68 EHP00398 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 65 pF 55 fT 5 CCB/C EB 50 45 40 35 30 10 2 5 25 20 15 10 5 CCB CEB 10 1 10 0 5 10 1 5 10 2 mA 10 3 0 0 2 4 6 8 10 12 14 16 V 20 ΙC VCB/VEB Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 550 10 3 Ptot max 5 Ptot DC BCW66K BCW66 BCW 67/68 EHP00399 mW 450 400 D= tp T tp T Ptot 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 °C TS 150 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 6 2007-04-20 Package SOT23 BCW67, BCW68 Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 7 2007-04-20 BCW67, BCW68 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-20
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