BCW68

BCW67, BCW68 PNP Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 (NPN) 3 1For calculation of R thJA please refer to Application Note Thermal Resistance 1




2 1 VPS05161 Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H Maximum Ratings Parameter Marking DAs DBs DCs DFs DGs DHs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO BCW67 32 45 5 800 1 100 200 330 150 BCW68 45 60 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature Thermal Resistance IC ICM IB IBM Ptot Tj Tstg RthJS mA A mA mW °C -65 ... 150 Junction - soldering point1) 215 K/W Jul-10-2001 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 10 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 100 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H 1) Pulse test: t ≤ 300µs, D = 2% Unit max. V typ. V(BR)CEO BCW67 BCW68 V(BR)CBO BCW67 BCW68 V(BR)EBO ICBO BCW67 BCW68 ICBO BCW67 BCW68 IEBO hFE 35 50 80 hFE 75 120 180 hFE 100 160 250 160 250 350 250 400 630 20 20 20 20 20 45 60 5 32 45 - nA µA nA - 2 Jul-10-2001 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics DC current gain 1) IC = 500 mA, VCE = 2 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 200 MHz VBEsat 1.25 2 VCEsat 0.3 0.7 hFE 35 60 100 V Symbol min. Values typ. max. Unit 3 Jul-10-2001 BCW67, BCW68 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 10 3 MHz BCW 67/68 EHP00398 360 mW 300 270 fT 5 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 2 5 °C 150 TS 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCW 67/68 EHP00399 Collector cutoff current ICBO = f (T A) VCB = V CEmax 10 5 nA BCW 67/68 EHP00400 tp D= T tp T Ι CB0 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 4 5 10 5 2 10 3 5 10 2 5 max 10 5 1 typ 10 1 5 10 0 10 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 0 50 100 ˚C TA 150 4 Jul-10-2001 BCW67, BCW68 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 mA BCW 67/68 EHP00401 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 10 3 mA BCW 67/68 EHP00402 ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C 10 1 5 10 1 5 10 0 10 5 0 5 10 -1 0 1 2 3 V 4 10 -1 0 200 400 600 mV 800 VCE sat VBE sat DC current gain hFE = f (IC ) VCE = 1V 10 3 5 BCW 67/68 EHP00403 100 ˚C 25 ˚C h FE 10 2 -50 ˚C 5 10 1 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Jul-10-2001