BCX41

BCX41, BSS64 NPN Silicon AF and Switching Transistors For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX42, BSS63 (PNP) 3 Type BCX41 BSS64 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS



2 1 VPS05161 Marking EKs AMs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BSS64 80 120 5 800 1 100 200 330 150 BCX41 125 125 5 Unit V IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BCX41, BSS64 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 Collector cutoff current VCE = 100 V, TA = 85 °C VCE = 100 V, TA = 125 °C DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 4 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 20 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX41 BSS64 BSS64 BSS64 BSS64 BCX41 BCX41 BCX41 BCX41 hFE 25 20 63 40 60 80 80 55 ICEO 10 75 BSS64 BCX41 IEBO BSS64 BCX41 ICBO 20 20 100 ICBO 100 100 BSS64 BCX41 V(BR)EBO BSS64 BCX41 V(BR)CBO 120 125 5 V(BR)CEO 80 125 typ. max. Unit V nA µA nA µA - 1) Pulse test: t ≤ 300µs, D = 2% 2 Aug-20-2001 BCX41, BSS64 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 4 mA, IB = 0.4 mA IC = 50 mA, IB = 15 mA Base-emitter saturation voltage 1) IC = 300 mA, IB = 30 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 pF fT 100 MHz BCX41 BCX41 BSS64 BSS64 VBEsat VCEsat 0.9 0.7 3 1.4 V Symbol min. Values typ. max. Unit 3 Aug-20-2001 BCX41, BSS64 Total power dissipation Ptot = f(TS) Collector current I C = f (VBE) VCE = 1V 10 3 mA BCX 41/BSS 64 EHP00421 360 mW 300 270 ΙC 10 2 5 TA = 150 ˚C 25 ˚C -50 ˚C P tot 240 210 180 150 120 90 60 30 0 0 10 1 5 10 5 0 10 -1 15 30 45 60 75 90 105 120 °C 150 TS 0 1 2 V VBE 3 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCX 41/BSS 64 EHP00422 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz T BCX 41/BSS 64 EHP00423 tp D= T tp fT 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC 4 Aug-20-2001 BCX41, BSS64 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 mA BCX 41/BSS 64 EHP00424 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 10 mA 3 BCX 41/BSS 64 EHP00425 ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C ΙC 10 5 2 150 ˚C 25 ˚C -50 ˚C 10 1 5 10 5 1 10 5 0 10 5 0 10 -1 10 -1 0 1 2 V VBE sat 3 0 200 400 600 mV 800 VCE sat Collector cutoff current ICBO = f (TA) VCB = 80V 10 4 nA BCX 41/BSS 64 EHP00426 DC current gain hFE = f (I C) VCE = 1V 10 3 BCX 41/BSS 64 EHP00427 Ι CB0 10 3 5 10 2 5 10 1 5 10 0 max h FE 5 150 ˚C 25 ˚C -50 ˚C 10 2 typ 5 5 10 -1 10 1 10 -1 0 50 100 ˚C TA 150 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Aug-20-2001