BCX42
PNP Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BCX41 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
3 1
2
Type BCX42
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation TS ≤ 79 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2)
1Pb-containing 2For
Marking DKs
Pin Configuration 1=B 2=E 3=C
Package SOT23
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Symbol RthJS
Value 125 125 5 800 1 100 200 330 150 -65 ... 150 Value ≤ 215
Unit V
mA A mA mW °C
Unit K/W
package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance
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BCX42
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 125 V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO V(BR)EBO I CBO
125 5
-
µA
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 100 V, IE = 0 VCB = 100 V, IE = 0 , T A = 150 °C
I CEO
-
0.1 20 10 75 100 nA -
Collector-emitter cutoff current
VCE = 100 V, TA = 85 °C VCE = 100 V, TA = 125 °C
I EBO h FE
Emitter-base cutoff current
VEB = 4 V, IC = 0
-
DC current gain1)
IC = 100 µA, VCE = 1 V IC = 100 mA, V CE = 1 V IC = 200 mA, V CE = 1 V
25 63 40
VCEsat VBEsat
-
0.9 1.4 V
Collector-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
-
Base emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1Pulse
fT Ccb
-
150 12
-
MHz pF
test: t < 300µs; D < 2%
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BCX42
DC current gain hFE = ƒ(IC) VCE = 1 V
10 3
BCX 42/BSS 63 EHP00435
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10
3 BCX 42/BSS 63 EHP00433
10 mA
h FE
5
ΙC
10
2
150 ˚C 25 ˚C -50 ˚C
150 ˚C 25 ˚C -50 ˚C 10 2
5
10 5
1
5
10 5
0
10 1 10 -1
5 10 0
5 10 1
5 10 2
mA 10 3
10 -1
0
200
400
600 mV 800 VCE sat
ΙC
Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10
10 3 mA
BCX 42/BSS 63 EHP00432
Collector current I C = ƒ(V BE) VCE = 1V
10 3 mA
BCX 42/BSS 63 EHP00429
ΙC
10 2 5 150 ˚C 25 ˚C -50 ˚C
ΙC
10 2 5 TA = 150 ˚C 25 ˚C -50 ˚C
10 1 5
10 1 5
10 5
0
10 5
0
10 -1
0
1
2
V VBE sat
3
10 -1
0
1
2
V VBE
3
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BCX42
Collector cutoff current ICBO = ƒ(TA) VCBO = 100 V
10 4 nA
BCX 42/BSS 63 EHP00434
Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz
10 3 MHz
BCX 42/BSS 63 EHP00431
Ι CB0
10 3 5 10 2 5 10 1 5 10 5 10 -1
0
max
fT
5
10 2
typ
5
0
50
100
˚C TA
150
10 1 10 0
5 10 1
5
10 2
mA
10 3
ΙC
Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB)
Total power dissipation Ptot = ƒ(TS)
90
pF
550
mW
450
CCB(CEB )
70 400
BCW66K BCW66
Ptot
CEB CCB
60 50 40 30 20
350 300 250 200 150 100
10 0 0
50 0 0 15 30 45 60 75 90 105 120
4
8
12
16
V
22
VCB(VEB)
°C 150 TS
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BCX42
Total power dissipation Ptot = ƒ(TS)
10 3 Ptot max 5 Ptot DC
BCX 42/BSS 63
EHP00430
D=
tp T
tp T
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
5
2007-04-27
Package SOT23
BCX42
Package Outline
0.15 MIN.
1 ±0.1 0.1 MAX.
1.3 ±0.1
2.9 ±0.1
3
B
2.4 ±0.15
10˚ MAX.
0.4 +0.1 -0.05
1)
1
2
10˚ MAX.
C 0.95 1.9
0.08...0.1
A
5
0...8˚
0.25 M B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
Pin 1
0.9
1.3
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
8
Pin 1
3.15
1.15
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BCX42
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2007-04-27
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