BCX52-10

BCX51...BCX53 PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) 1 2 3 2 VPS05162 Type BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 Marking AA AC AD AE AG AM AH AK AL 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E Package SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 1 Feb-10-2004 BCX51...BCX53 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol VCEO VCBO VEBO BCX51 45 45 5 BCX52 60 60 5 BCX53 80 100 5 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature Thermal Resistance IC ICM IB IBM Ptot Tj Tstg RthJS 1 1.5 100 200 1 150 -65 ... 150 ≤20 A mA W °C Junction - soldering point1) K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Feb-10-2004 BCX51...BCX53 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCX51 BCX52 BCX53 Collector-base breakdown voltage IC = 100 µA, IE = 0 BCX51 BCX52 BCX53 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V BCX51...53 hFE-grp.10 hFE-grp.16 DC current gain 1) IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V VBE(ON) 1 VCEsat 0.5 h FE h FE 40 63 100 25 100 160 250 160 250 h FE 25 ICBO 20 ICBO 100 V(BR)EBO V(BR)CBO 45 60 100 5 V(BR)CEO 45 60 80 typ. max. Unit V nA µA - V AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t ≤ 300µs, D = 2% fT - 125 - MHz 3 Feb-10-2004 BCX51...BCX53 Total power dissipation Ptot = f(TS) Collector current IC = f (VBE) VCE = 2V 1.2 W 10 4 mA BCX 51...53 EHP00437 1 0.9 ΙC 10 3 5 100 ˚C 25 ˚C -50 ˚C Ptot 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 °C 150 10 2 5 10 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE TS Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 Ptot max 5 Ptot DC BCX 51...53 EHP00438 Transition frequency fT = f (IC) VCE = 10V 10 3 MHz T BCX 51...53 EHP00439 tp D= T tp fT 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC 4 Feb-10-2004 BCX51...BCX53 DC current gain hFE = f (I C) VCE = 2V 10 3 5 BCX 51...53 EHP00440 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 4 BCX 51...53 EHP00441 10 mA h FE 100 ˚C 25 ˚C -50 ˚C 5 ΙC 10 5 100 ˚C 25 ˚C -50 ˚C 3 10 2 10 5 2 10 1 5 10 5 1 10 0 10 0 5 10 1 5 10 2 5 10 3 mA 10 4 10 0 0 0.2 0.4 0.6 V 0.8 ΙC VCE sat Collector cutoff current ICBO = f (TA) VCB = 30V 10 4 nA BCX 51...53 EHP00442 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 4 mA BCX 51...53 EHP00443 Ι CB0 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 max ΙC 10 3 5 100 ˚C 25 ˚C -50 ˚C 10 2 typ 5 10 5 1 10 0 0 50 100 ˚C TA 150 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE sat 5 Feb-10-2004