BCX55

BCX54...BCX56 NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX51...BCX53 (PNP)



1 2 3 2 VPS05162 Type BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 Marking BA BC BD BE BG BM BH BK BL 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E Package SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 1 Jul-10-2001 BCX54...BCX56 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol VCEO VCBO VEBO BCX54 45 45 5 BCX55 60 60 5 BCX56 80 100 5 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point 1) RthJS
20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jul-10-2001 BCX54...BCX56 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCX54 BCX55 BCX56 Collector-base breakdown voltage IC = 100 µA, IB = 0 BCX54 BCX55 BCX56 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V BCX54...56 hFE-grp.10 hFE-grp.16 DC current gain 1) IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V VBE(ON) 1 VCEsat 0.5 hFE hFE 40 63 100 25 100 160 250 160 250 hFE 25 ICBO 20 ICBO 100 V(BR)EBO V(BR)CBO 45 60 100 5 V(BR)CEO 45 60 80 typ. max. Unit V nA µA - V AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t ≤=300µs, D = 2% fT - 100 - MHz 3 Jul-10-2001 BCX54...BCX56 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 10 3 MHz BCX 54...56 EHP00445 1.2 W fT 5 P tot 0.8 0.6 10 2 0.4 5 0.2 0 0 15 30 45 60 75 90 105 120 °C 150 10 1 10 0 5 10 1 5 10 2 mA 10 3 TS ΙC Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCX 54...56 EHP00446 Collector cutoff current ICBO = f (T A) VCB = 30V 10 4 nA BCX 54...56 EHP00447 D= tp T tp T Ι CB0 10 3 5 max 10 5 2 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 1 5 10 5 0 typ 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 0 50 100 ˚C TA 150 4 Jul-10-2001 BCX54...BCX56 Collector current IC = f (VBE) VCE = 2V 10 4 mA BCX 54...56 EHP00448 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 4 BCX 54...56 EHP00449 10 mA ΙC 10 5 3 ΙC 10 3 100 ˚C 25 ˚C -50 ˚C 5 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 5 2 10 5 1 10 5 1 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE 10 0 0 0.2 0.4 0.6 V 0.8 VCE sat Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 4 mA BCX 54...56 EHP00450 DC current gain hFE = f (I C) VCE = 2V BCX 54...56 EHP00451 10 3 5 ΙC 10 5 3 h FE 100 ˚C 100 ˚C 25 ˚C -50 ˚C 2 10 2 5 25 ˚C -50 ˚C 10 5 10 1 10 1 5 5 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE sat 10 0 10 -1 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Jul-10-2001