BCX69-10

BCX69 PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX68 (NPN) 1 2 3 Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1
Junction - soldering point 1)




2 VPS05162 Type BCX69 BCX69-10 BCX69-16 BCX69-25 Maximum Ratings Parameter Marking CE CF CG CH 1=B 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E Package SOT89 SOT89 SOT89 SOT89 Symbol VCEO VCBO VEBO Values 20 25 5 1 2 100 200 1 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg A mA W °C RthJS 20 K/W Jul-23-2001 BCX69 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V BCX69 BCX69-10 BCX69-16 BCX69-25 DC current gain 1) IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VBE(ON) 0.6 1 VCEsat 0.5 hFE hFE 85 85 100 160 60 100 160 250 375 160 250 375 hFE 50 ICBO 100 ICBO 100 V(BR)EBO 5 V(BR)CBO 25 V(BR)CEO 20 typ. max. Unit V nA µA - V AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz fT 100 MHz 1) Pulse test: t ≤=300µs, D = 2% 2 Jul-23-2001 BCX69 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 10 3 MHz BCX 69 EHP00469 1.2 W 1 0.9 fT 5 P tot 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 °C 150 10 2 5 10 1 10 0 5 10 1 5 10 2 mA 10 3 TS ΙC Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCX 69 EHP00470 Collector cutoff current ICBO = f (T A) VCB = 25V 10 5 nA BCX 69 EHP00471 D= tp T tp T Ι CB0 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 4 5 max 10 5 2 10 3 5 10 2 5 10 1 typ 10 1 5 5 10 0 -6 10 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 0 50 100 ˚C TA 150 3 Jul-23-2001 BCX69 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 BCX 69 EHP00472 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 4 BCX 69 EHP00473 10 4 mA 10 mA ΙC 10 3 5 100 ˚C 25 ˚C -50 ˚C ΙC 10 5 100 ˚C 25 ˚C -50 ˚C 3 10 2 5 10 5 2 10 5 1 10 5 1 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE sat 10 0 0 0.2 0.4 0.6 V 0.8 VCE sat Collector current IC = f (VBE) VCE = 1V 10 4 mA BCX 69 EHP00474 DC current gain hFE = f (I C) VCE = 1V 10 3 5 BCX 69 EHP00475 ΙC 10 5 3 h FE 100 ˚C 10 2 5 25 ˚C -50 ˚C 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 1 10 1 5 5 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE 10 0 10 0 5 10 1 5 10 2 5 10 3 mA 10 4 ΙC 4 Jul-23-2001