BDP948_08

BDP948, BDP950, BDP954 PNP Silicon AF Power Transistors • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP947, BDP949 BDP953 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 2 1 3 Type BDP948 BDP950 BDP954 Marking BDP948 1=B BDP950 1=B BCP954 1=B 2=C 2=C 2=C Pin Configuration 3=E 3=E 3=E 4=C 4=C 4=C - Package SOT223 SOT223 SOT223 1 2008-10-10 BDP948, BDP950, BDP954 Maximum Ratings Parameter Collector-emitter voltage BDP948 BDP950 BDP954 Collector-base voltage BDP948 BDP950 BDP954 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 100 °C VEBO IC I CM IB I BM Ptot Tj T stg VCBO Symbol VCEO Value 45 60 100 45 60 120 5 3 5 200 500 5 150 -65 ... 150 Unit V A mA W °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1Pb-containing 2For Symbol RthJS Value ≤ 10 Unit K/W package may be available upon special request calculation of R thJA please refer to Application Note Thermal Resistance 2 2008-10-10 BDP948, BDP950, BDP954 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BDP948 IC = 10 mA, IB = 0 , BDP950 IC = 10 mA, IB = 0 , BDP954 V(BR)CEO Symbol min. Values typ. max. Unit V 45 60 100 µA 0.1 20 100 nA 25 85 50 15 475 0.5 1.3 V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BDP948 IC = 100 µA, IE = 0 , BDP950 IC = 100 µA, IE = 0 , BDP954 V(BR)CBO 45 60 120 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C Emitter-base cutoff current VEB = 4 V, IC = 0 I EBO h FE - DC current gain1) IC = 10 mA, VCE = 5 V IC = 500 mA, V CE = 1 V IC = 1 A, VCE = 2 V BDP948,BDP950 BDP954 IC = 1 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A VCEsat VBEsat - Base emitter saturation voltage1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 100 MHz 1Pulse fT Ccb - 100 40 - MHz pF test: t < 300µs; D < 2% 3 2008-10-10 BDP948, BDP950, BDP954 DC current gain hFE = ƒ(IC) VCE = 2 V 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 4 mA - 10 3 h FE IC 10 2 10 2 100°C 25°C -50°C 100 °C 25 °C -50 °C 10 1 10 1 0 10 10 1 10 2 10 3 mA 10 4 10 0 0 0.1 0.2 0.3 0.4 V 0.6 IC VCEsat Base-emitter saturation voltage IC = (V BEsat), hFE = 10 10 4 mA Collector current I C = ƒ(VBE) VCE = 2 V 10 4 mA 10 3 10 3 10 2 -50°C 25°C 100°C -50°C 25°C 100°C 10 2 IC 10 1 IC 10 1 10 0 0 10 0 0 0.2 0.4 0.6 0.8 1 V 1.3 0.2 0.4 0.6 0.8 1 V 1.3 VBEsat VBE 4 2008-10-10 BDP948, BDP950, BDP954 Collector cutoff current ICBO = ƒ(TA) VCB = 45 V 10 5 nA 10 4 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 425 pF 350 CCB(C EB) I CB0 10 3 max 300 250 200 150 CEB 10 2 10 1 typ 100 10 0 50 CCB 10 -1 0 20 40 60 80 100 120 °C 150 0 0 4 8 12 16 V 22 TA VCB(VEB) Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 5.5 W 10 2 4.5 4 RthJS Ptot 10 1 3.5 3 2.5 2 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 °C 150 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 ts tp 5 2008-10-10 BDP948, BDP950, BDP954 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 P totmax/P totDC - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2008-10-10 Package SOT223 BDP948, BDP950, BDP954 Package Outline A 6.5 ±0.2 3 ±0.1 4 1.6±0.1 0.1 MAX. 15˚ MAX. B 3.5 ±0.2 1 2 3 7 ±0.3 0.7 ±0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 ±0.04 0...10˚ Foot Print 0.25 M B 3.5 1.4 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 1.4 4.8 8 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 7 2008-10-10 BDP948, BDP950, BDP954 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2008-10-10