BDP949

BDP947, BDP949, BDP953 Silicon NPN Transistors • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP948, BDP950, BDP954 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 2 1 3 Type BDP947 BDP949 BDP953 Marking BDP947 1=B BDP949 1=B BDP953 1=B 2=C 2=C 2=C Pin Configuration 3=E 3=E 3=E 4=C 4=C 4=C - Package SOT223 SOT223 SOT223 1 2009-05-28 BDP947, BDP949, BDP953 Maximum Ratings Parameter Collector-emitter voltage BDP947 BDP949 BDP953 Collector-base voltage BDP947 BDP949 BDP953 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current, tp ≤ 10 ms Total power dissipationTS ≤ 100 °C Junction temperature Storage temperature 1Pb-containing Symbol VCEO Value 45 60 100 Unit V VCBO 45 60 120 VEBO IC ICM IB IBM Ptot Tj Tstg 5 3 5 200 500 5 150 -65 ... 150 W °C mA A package may be available upon special request Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 10 Unit K/W 2 2009-05-28 BDP947, BDP949, BDP953 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BDP947 IC = 10 mA, IB = 0 , BDP949 IC = 10 mA, IB = 0 , BDP953 V(BR)CEO Symbol min. Values typ. max. Unit V 45 60 100 µA 0.1 20 100 nA 25 100 50 15 475 0.5 1.3 V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BDP947 IC = 100 µA, IE = 0 , BDP949 IC = 0 , IE = 100 µA, BDP953 V(BR)CBO 45 60 120 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C Emitter-base cutoff current VEB = 4 V, IC = 0 I EBO h FE - DC current gain2) IC = 10 mA, VCE = 5 V IC = 500 mA, V CE = 1 V IC = 2 A, VCE = 2 V, BDP947, BDP949 IC = 2 A, VCE = 2 V, BDP953 Collector-emitter saturation voltage2) IC = 2 A, IB = 0.2 A VCEsat VBEsat - Base emitter saturation voltage2) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT Ccb - 100 25 - MHz pF Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2Pulse 3 2009-05-28 BDP947, BDP949, BDP953 DC current gain hFE = ƒ(IC) VCE = 2 V 10 3 100°C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 4 mA - 25°C 10 3 10 2 -55°C hFE IC 10 2 100°C 25°C -50°C 10 1 10 1 10 0 0 10 10 1 10 2 10 3 mA 10 4 10 0 0 0.1 0.2 0.3 0.4 V 0.6 IC VCEsat Base-emitter saturation voltage IC = (V BEsat), hFE = 10 10 4 mA Collector current I C = ƒ(VBE) VCE = 2 V 10 4 mA 10 3 10 3 -50°C 25°C 100°C 10 2 -50°C 25°C 100°C 10 2 IC 10 1 IC 10 1 10 0 0 10 0 0 0.2 0.4 0.6 0.8 1 V 1.3 0.2 0.4 0.6 0.8 1 V 1.3 VBEsat VBE 4 2009-05-28 BDP947, BDP949, BDP953 Collector cutoff current ICBO = ƒ(TA) VCB = 45 V 10 5 nA 10 4 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 500 pF CCB(C EB) 400 350 300 250 200 CEB I CB0 10 3 max 10 2 10 1 typ 150 100 50 10 0 10 -1 0 CCB 20 40 60 80 100 120 °C 150 0 0 4 8 12 16 V 22 TA VCB(VEB) Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 5.5 W 10 2 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 °C 150 10 -1 -6 10 10 -5 RthJS Pto t 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 -4 10 -3 10 -2 s 10 0 ts tp 5 2009-05-28 BDP947, BDP949, BDP953 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 P totmax/P totDC - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2009-05-28 Package SOT223 BDP947, BDP949, BDP953 Package Outline A 6.5 ±0.2 3 ±0.1 4 1.6±0.1 0.1 MAX. 15˚ MAX. B 3.5 ±0.2 1 2 3 7 ±0.3 0.7 ±0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 ±0.04 0...10˚ Foot Print 0.25 M B 3.5 1.4 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 1.4 4.8 8 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 7 2009-05-28 BDP947, BDP949, BDP953 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2009-05-28