BDP950

BDP948, BDP950 PNP Silicon AF Power Transistors For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP947, BDP949 (NPN) 1For calculation of R thJA please refer to Application Note Thermal Resistance 1





4 3 2 1 VPS05163 Type BDP948 BDP950 Maximum Ratings Parameter Marking BDP 948 BDP 950 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BDP948 45 45 5 3 5 200 500 3 150 BDP950 60 60 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature Thermal Resistance IC ICM IB IBM Ptot Tj Tstg A mA W °C -65 ... 150 Junction - soldering point1) RthJS 17 K/W Jul-06-2001 BDP948, BDP950 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 45 V, IE = 0 Collector cutoff current VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 40 pF fT 100 MHz VBEsat 1.3 VCEsat hFE 25 85 50 475 0.5 V IEBO 100 nA ICBO 20 µA ICBO 100 nA BDP948 BDP950 V(BR)EBO BDP948 BDP950 V(BR)CBO 45 60 5 V(BR)CEO 45 60 V Symbol min. Values typ. max. Unit - 1) Pulse test: t ≤=300µs, D = 2% 2 Jul-06-2001 BDP948, BDP950 Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 3.2 W 10 3 K/W 10 2 2.4 P tot 2 RthJS 10 1 1.6 10 0 1.2 0.8 10 -1 0.4 10 -2 -6 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 0 20 40 60 80 100 120 °C 150 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 DC current gain hFE = f (IC) VCE = 2V 10 3 Ptotmax / PtotDC - - 100°C 25°C D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 hFE 10 2 10 2 -50°C 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 0 10 10 1 10 2 10 3 mA 10 4 tp IC 3 Jul-06-2001 BDP948, BDP950 Collector cutoff current ICBO = f (TA ) VCB = 45V 10 5 nA Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 10 4 mA 10 4 10 3 ICBO 10 3 IC max 10 2 10 2 100°C 25°C -50°C 10 1 typ 10 1 10 0 10 -1 0 20 40 60 80 100 120 °C 150 10 0 0.0 0.1 0.2 0.3 0.4 V 0.6 TA VCEsat Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 4 mA Collector current I C = f (VBE) VCE = 2V 10 4 mA 10 3 10 3 10 2 -50°C 25°C 100°C -50°C 25°C 100°C 10 2 IC 10 1 IC 10 1 10 0 0.0 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 0.2 0.4 0.6 0.8 1.0 V 1.3 VBEsat VBE 4 Jul-06-2001