BDP953

BDP951 ... BDP955 NPN Silicon AF Power Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP952 ... BDP956 (PNP) Type BDP951 BDP953 BDP955 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance




4 3 2 1 VPS05163 Marking Pin Configuration Package BDP 951 BDP 953 PDP 955 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C SOT223 SOT223 SOT223 Symbol VCEO VCBO VEBO BDP 951 BDP 953 BDP 955 Unit 80 100 5 100 120 5 3 5 200 500 3 150 -65 ... 150 W °C mA 120 140 5 A V IC ICM IB IBM Ptot Tj Tstg
17 K/W 1 Aug-06-2001 BDP951 ... BDP955 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP951 BDP953 BDP955 Collector-base breakdown voltage IC = 100 µA, IB = 0 BDP951 BDP953 BDP955 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 100 V, IE = 0 Collector cutoff current VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤=300µs, D = 2% Unit max. V typ. V(BR)CEO 80 100 120 V(BR)CBO 100 120 140 V(BR)EBO ICBO ICBO IEBO hFE 25 40 15 VCEsat VBEsat 475 0.8 1.5 5 100 20 100 - nA µA nA - V fT Ccb - 100 25 - MHz pF 2 Aug-06-2001 BDP951 ... BDP955 Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 3.2 W 10 3 K/W 10 2 2.4 P tot RthJS 2 10 1 1.6 10 0 1.2 0.8 10 -1 0.4 10 -2 -6 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 0 20 40 60 80 100 120 °C 150 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 DC current gain hFE = f (IC) VCE = 2V 10 3 Ptotmax / PtotDC - 100°C 25°C 10 1 hFE 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 -50°C 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 0 10 10 1 10 2 10 3 mA 10 4 tp IC 3 Aug-06-2001 BDP951 ... BDP955 Collector cutoff current ICBO = f (TA ) VCB = 45V 10 5 nA Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 10 4 mA 10 4 10 3 ICBO 10 3 max 100°C 25°C -50°C 10 2 10 2 10 1 typ IC 10 1 10 0 10 -1 0 120 °C 10 0 0.0 20 40 60 80 100 150 0.2 0.4 V 0.8 TA VCEsat Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 4 mA Collector current I C = f (VBE) VCE = 2V 10 4 mA 10 3 10 3 -50°C 25°C 100°C 10 2 IC IC 10 2 -50°C 25°C 100°C 10 1 10 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 VBEsat VBE 4 Aug-06-2001