BDP956

BDP952...BDP956 PNP Silicon AF Power Transistors For AF driver and output stages High current gain Low collector-emitter saturation voltage Complementary types: BDP951...BDP955 (NPN) 1For calculation of R thJA please refer to Application Note Thermal Resistance 1




4 3 2 1 VPS05163 Type BDP952 BDP954 BDP956 Maximum Ratings Parameter Marking BDP 952 BDP 954 BDP 956 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT223 SOT223 SOT223 Symbol VCEO VCBO VEBO BDP952 80 100 5 BDP954 100 120 5 BDP956 Unit 120 140 5 V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature Thermal Resistance IC ICM IB IBM Ptot Tj Tstg RthJS 3 5 200 500 3 150 -65 ... 150 A mA W °C Junction - soldering point1) 17 K/W Jul-06-2001 BDP952...BDP956 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP952 BDP954 BDP956 Collector-base breakdown voltage IC = 100 µA, IB = 0 BDP952 BDP954 BDP956 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 100 V, IE = 0 Collector cutoff current VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A VBEsat 1.5 VCEsat hFE 25 40 15 475 0.8 IEBO 100 ICBO 20 ICBO 100 V(BR)EBO V(BR)CBO 100 120 140 5 V(BR)CEO 80 100 120 typ. max. Unit V nA µA nA - V AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤=300µs, D = 2% fT Ccb - 100 40 - MHz pF 2 Jul-06-2001 BDP952...BDP956 Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 3.2 W 10 3 K/W 10 2 2.4 P tot 2 RthJS 10 1 1.6 10 0 1.2 0.8 10 -1 0.4 10 -2 -6 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 0 20 40 60 80 100 120 °C 150 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load DC current gain hFE = f (IC) Ptotmax / PtotDC = f (tp) 10 3 VCE = 2V 10 3 Ptotmax / PtotDC 100°C 25°C hFE 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 -50°C 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 1 0 10 10 1 10 2 10 3 mA 10 4 tp IC 3 Jul-06-2001 BDP952...BDP956 Collector cutoff current ICBO = f (TA ) Collector-emitter saturation voltage VCB = 45V 10 5 nA IC = f (VCEsat), hFE = 10 10 4 mA 10 4 10 3 ICBO 10 3 IC max 10 2 10 2 100°C 25°C -50°C 10 1 typ 10 1 10 0 10 -1 0 20 40 60 80 100 120 °C 150 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8 TA VCEsat Base-emitter saturation voltage Collector current I C = f (VBE) IC = f (VBEsat ), hFE = 10 10 4 mA VCE = 2V 10 4 mA 10 3 10 3 10 2 -50°C 25°C 100°C IC IC 10 2 -50°C 25°C 100°C 10 1 10 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 VBEsat VBE 4 Jul-06-2001