BF1005SW

BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1005S BF1005SR BF1005SW Maximum Ratings Parameter Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking NZs NZs NZ Symbol VDS ID ±IG1/2SM +VG1SE Ptot Value 8 25 10 3 200 200 Unit V mA V mW Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1005S, BF1005SR TS ≤ 94 °C, BF1005SW Storage temperature Channel temperature Tstg Tch -55 ... 150 150 °C Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 Feb-18-2004 BF1005S... Thermal Resistance Parameter Channel - soldering point 1) BF1005S, BF1005SR BF1005SW Symbol Rthchs ≤ 370 ≤ 280 Value Unit K/W Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current (selfbiased) VDS = 5 V, VG2S = 4 V Gate2-source pinch-off voltage VDS = 5 V, I D = 100 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol min. V(BR)DS +V(BR)G1SS ±V (BR)G2SS +IG1SS ±IG2SS IDSS IDSO VG2S(p) 12 8 8 8 - Values typ. 100 13 1 max. 12 13 50 800 16 - Unit V µA nA µA mA V 2 Feb-18-2004 BF1005S... Electrical Characteristics Parameter AC Characteristics VDS = 5 V, V G2S = 4.5 V Gate1 input capacitance VDS = 5 V, V G2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, V G2S = 4 V, f = 100 MHz Power gain (self biased) VDS = 5 V, V G2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, V G2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4 V ... 0 V, f = 800 MHz ∆G p 40 50 F 1.6 2.1 dB Gp 20 22 dB Cdss 1.3 Cg1ss 2.4 2.7 pF Symbol min. (verified by random sampling) g fs 26 30 mS Forward transconductance Values typ. max. Unit 3 Feb-18-2004 BF1005S... Total power dissipation Ptot = ƒ(TS) BF1005S, BF1005SR Total power dissipation Ptot = ƒ(TS) BF1005SW 220 mW 220 mA 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Drain current ID = ƒ(VG2S) Insertion power gain |S21|² = ƒ(VG2S) 20 mA 15 dB 16 -5 |S21|² V 14 ID 12 10 8 6 -15 -25 -35 -45 4 2 0 0 -55 0.5 1 1.5 2 2.5 3 3.5 4.5 -65 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VG2S VG2S 4 Feb-18-2004 BF1005S... Forward transfer admittance |Y21| = ƒ(VG2S) 40 mS pF Gate 1 input capacitance Cg1ss= ƒ(Vg2s) f = 200MHz 3 32 |Y 21| 28 24 20 16 12 8 4 0 0 V C g1ss 2 1.5 1 0.5 0.5 1 1.5 2 2.5 3 3.5 4.5 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VG2S VG2S Output capacitance C dss = ƒ(VG2S) f = 200MHz 3 pF Cdss 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VG2S 5 Feb-18-2004