BF1009S

BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 ... 150 150 Marking JLs JLs Unit V mA V mW Symbol VDS ID ±IG1/2SM +VG1SE Ptot Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1009S, BF1009SR TS ≤ 94 °C, BF1009W Storage temperature Channel temperature °C Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 Feb-18-2004 BF1009S... Thermal Resistance Parameter Channel - soldering point 1) BF1009S, BF1009SR BF1009SW Symbol Rthchs ≤ 370 ≤ 280 Value Unit K/W Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V Operating current (selfbiased) VDS = 9 V, VG2S = 6 V Gate2-source pinch-off voltage VDS = 9 V, I D = 100 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol min. V(BR)DS +V(BR)G1SS ±V (BR)G2SS +IG1SS ±IG2SS IDSS IDSO VG2S(p) 12 8 10 10 - Values typ. 14 0.9 max. 12 16 60 50 500 19 - Unit V µA nA µA mA V 2 Feb-18-2004 BF1009S... Electrical Characteristics Parameter AC Characteristics VDS = 9 V, V G2S = 6 V Gate1 input capacitance VDS = 9 V, V G2S = 6 V, f = 1 MHz Output capacitance VDS = 9 V, V G2S = 6 V, f = 1 MHz Power gain (self biased) VDS = 9 V, V G2S = 6 V, f = 800 MHz Noise figure VDS = 9 V, V G2S = 6 V, f = 800 MHz Gain control range VDS = 9 V, V G2S = 6 ... 0 V, f = 800 MHz ∆G p 40 50 F 1.4 2.1 dB Gp 18 22 dB Cdss 0.9 Cg1ss 2.1 2.7 pF Symbol min. (verified by random sampling) g fs 26 30 mS Forward transconductance Values typ. max. Unit 3 Feb-18-2004 BF1009S... Total power dissipation Ptot = ƒ(TS) BF1009S, BF1009SR Total power dissipation Ptot = ƒ(TS) BF1009SW 220 mW 220 mA 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Drain current ID = ƒ(VG2S) Insertion power gain |S21|² = ƒ(VG2S) 15 mA 10 dB 0 12 -5 ID 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 V |S21|2 11 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 6 -60 0 1 2 3 4 V 6 VG2S VG2S 4 Feb-18-2004 BF1009S... Forward transfer admittance |Y21| = ƒ(VG2S) 28 mS 24 22 2.4 Gate 1 input capacitance Cg1ss= ƒ(Vg2s) f = 200MHz pF 3 |Y 21| C g1ss V 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 6 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 V 6 VG2S VG2S Output capacitance C dss = ƒ(VG2S) f = 200MHz pF 3 2.4 2.2 Cdss 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 V 6 VG2S 5 Feb-18-2004