BF1009S_07

BF1009S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Drain AGC RF Input G2 G1 RF Output + DC GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF1009S BF1009SR Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 - Marking JLs JLs Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1009S, BF1009SR Storage temperature Channel temperature 1Pb-containing Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Value 12 25 10 3 200 -55 ... 150 150 Unit V mA V mW °C package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 2007-04-20 BF1009S... Thermal Resistance Parameter Channel - soldering point 1) BF1009S, BF1009SR Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 500 µA, VG1S = 0 , VG2S = 0 V(BR)DS Symbol Rthchs Value ≤ 370 Unit K/W Symbol min. 12 9 9 10 - Values typ. 13 0.9 max. 12 12 60 50 500 16 - Unit V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 +V(BR)G1SS ±V (BR)G2SS +IG1SS ±IG2SS IDSS IDSO VG2S(p) µA nA µA mA V Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V Operating current (selfbiased) VDS = 9 V, VG2S = 6 V Gate2-source pinch-off voltage VDS = 9 V, I D = 500 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 2007-04-20 BF1009S... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics VDS = 9 V, V G2S = 6 V Gate1 input capacitance VDS = 9 V, V G2S = 6 V, f = 10 MHz Output capacitance VDS = 9 V, V G2S = 6 V, f = 10 MHz Power gain (self biased) VDS = 9 V, V G2S = 6 V, f = 800 MHz Noise figure VDS = 9 V, V G2S = 6 V, f = 800 MHz Gain control range VDS = 9 V, V G2S = 6 ... 0 V, f = 800 MHz ∆G p 40 50 F 1.4 2.1 dB Gp 18 22 dB Cdss 0.9 Cg1ss 2.1 2.7 pF Symbol min. (verified by random sampling) gfs 26 30 mS Forward transconductance Values typ. max. Unit 3 2007-04-20 BF1009S... Total power dissipation Ptot = ƒ(TS) BF1009S, BF1009SR Drain current ID = ƒ(V G2S) VDS = 9 V 14 mA 12 180 11 160 10 220 mW P tot ID 90 105 120 °C 140 120 100 80 60 40 20 0 0 15 30 45 60 75 150 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 V 6 TS VG2S Insertion power gain |S21|² = ƒ(VG2S), f = 200 MHz 15 dB Forward transfer admittance |Y21| = ƒ(VG2S), f = 200 MHz 32 mS -5 24 lS21 l -15 lY21 l V 20 -25 16 -35 12 -45 8 -55 4 -65 0 1 2 3 4 6 0 0 1 2 3 4 V 6 VG2S VG2S 4 2007-04-20 BF1009S... Gate 1 input capacitance Cg1ss= ƒ(Vg2s) f = 200 MHz Output capacitance C dss = ƒ(VG2S) f = 200 MHz 3 pF pF 3 2.4 2.4 2.2 Cg1ss 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 V Cdss 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 6 0 0 1 2 3 4 V 6 VG2S VG2S 5 2007-04-20 Package SOT143 BF1009S... Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 6 2007-04-20 Package SOT143R BF1009S... Package Outline B 0.15 MIN. 2.9 ±0.1 1.9 4 3 1 ±0.1 0.1 MAX. 2.4 ±0.15 1 2 0.2 +0.1 0.8 -0.05 10˚ MAX. 0.08...0.15 0.4 +0.1 -0.05 1.7 0.25 M 0˚... 8˚ 0.2 M A B Foot Print 0.8 1.2 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 0.9 1.1 0.9 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 2.6 8 1.15 10˚ MAX. 1.3 ±0.1 A 7 2007-04-20 BF1009S... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-20