BF2030R

BF2030... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Drain AGC RF Input RG1 VGG G2 G1 RF Output + DC GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type BF2030 BF2030R BF2030W Package SOT143 SOT143R SOT343 1= S 1= D 1= D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking NDs NDs NDs Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF2030, BF2030R TS ≤ 94 °C, BF2030W Storage temperature Channel temperature 1Pb-containing Symbol VDS ID ±IG1/2SM +VG1SE Ptot Value 8 40 10 6 200 200 Unit V mA V mW Tstg Tch -55 ... 150 150 °C package may be available upon special request 1 2007-04-20 BF2030... Thermal Resistance Parameter Channel - soldering point 1) BF2030/ BF2030R BF2030W Symbol Rthchs Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 1For Symbol min. V(BR)DS +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) 10 6 6 0.3 0.3 Values typ. 12 0.5 0.6 max. 15 15 50 50 50 - Unit V nA µA mA V calculation of R thJA please refer to Application Note Thermal Resistance 2 2007-04-20 BF2030... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Symbol min. (verified by random sampling) gfs Cg1ss 27 31 2.4 2.8 mS pF Forward transconductance VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Power gain VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz ∆G p 40 50 F 1.5 2.2 dB Gp 20 23 dB Cdss 1.3 Values typ. max. Unit 3 2007-04-20 BF2030... Total power dissipation Ptot = ƒ(TS) BF2030, BF2030R Total power dissipation Ptot = ƒ(TS) BF2030W 220 mW 220 mA 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Drain current ID = ƒ(IG1) VG2S = 4V 28 mA 24 22 20 Output characteristics ID = ƒ(V DS) VG2S = 4V VG1S = Parameter 20 mA 1.4V 16 14 1.3V ID ID 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 µA 100 12 1.2V 10 8 6 1V 1.1V 4 2 0 0 0.8V 1 2 3 4 5 6 7 8 V 10 IG1 VDS 4 2007-04-20 BF2030... Gate 1 current IG1 = ƒ(V G1S) VDS = 5V VG2S = Parameter 210 µA 180 165 150 3.5V 4V Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter 40 mS 4V 30 3V I G1 135 120 105 90 75 60 45 30 15 0 0 0.4 0.8 1.2 1.6 2 2.4 V 2V 2.5V 3V g fs 25 2.5V 20 2V 15 10 5 3 0 0 4 8 12 16 20 24 mA 30 VDS ID Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter 30 mA 4V Drain current ID = ƒ(V GG) VDS = 5V, VG2S = 4V, RG1 = 100kΩ (connected to VGG, V GG=gate1 supply voltage) 13 mA 11 24 22 3V 10 9 20 ID ID 2V 1.5V V 18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VG1S VGG 5 2007-04-20 BF2030... Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 28 mA 70 Crossmodulation Vunw = (AGC) VDS = 5 V 120 dBµV 24 22 20 100 80 110 ID 18 16 14 12 10 8 120 V unw 105 100 95 90 6 4 2 0 0 1 2 3 4 5 6 V 85 8 80 0 10 20 30 40 dB 55 VGG=VDS AGC 6 2007-04-20 BF2030... Cossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 4n7 2.2 uH 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 7 2007-04-20 Package SOT143 BF2030... Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 8 2007-04-20 Package SOT143R BF2030... Package Outline B 0.15 MIN. 2.9 ±0.1 1.9 4 3 1 ±0.1 0.1 MAX. 2.4 ±0.15 1 2 0.2 +0.1 0.8 -0.05 10˚ MAX. 0.08...0.15 0.4 +0.1 -0.05 1.7 0.25 M 0˚... 8˚ 0.2 M A B Foot Print 0.8 1.2 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 0.9 1.1 0.9 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 2.6 8 1.15 10˚ MAX. 1.3 ±0.1 A 9 2007-04-20 Package SOT343 BF2030... Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 10 2007-04-20 BF2030... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2007-04-20