BF2040R

BF2040... Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF2040 BF2040R BF2040W Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking NFs NFs NFs Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF2040, BF2040R TS ≤ 94 °C, BF2040W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) BF2040, BF2040R BF2040W 1For Symbol VDS ID ±IG1/2SM +VG1SE Ptot Value 8 40 10 7 200 200 Unit V mA V mW Tstg Tch Symbol Rthchs -55 ... 150 150 °C Value ≤ 370 ≤ 280 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-06-01 BF2040... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, R G1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA VG2S(p) 0.3 0.7 VG1S(p) 0.3 0.6 V IDSX 15 mA IDSS 50 µA +IG2SS 50 +IG1SS 50 nA +V(BR)G2SS 6 15 +V(BR)G1SS 6 15 V(BR)DS 10 V Symbol min. Values typ. max. Unit 2 2007-06-01 BF2040... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, ID = 15 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 10 MHz Power gain VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, VG2S = 4 ...0 V , f = 800 GHz ∆Gp 45 50 F 1.6 2.2 dB Gp 20 23 dB Cdss 1.6 Cg1ss 2.9 3.4 pF gfs 37 42 mS Values typ. max. Unit 3 2007-06-01 BF2040... Total power dissipation P tot = ƒ(TS) BF2040, BFD2040R Total power dissipation P tot = ƒ(TS) BF2040W 220 mW 220 mA 180 160 180 160 Ptot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 Ptot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Drain current ID = ƒ(IG1 ) VG2S = 4V 28 mA 24 22 20 Output characteristics ID = ƒ(VDS ) VG2S = 4 V VG1S = Parameter 26 mA 22 20 18 1.3V 1.4V ID ID 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 µA 16 14 12 10 8 6 4 2 1V 1.1V 1.2V 90 0 0 1 2 3 4 5 6 7 8 V 10 IG1 VDS 4 2007-06-01 BF2040... Gate 1 current IG1 = ƒ(VG1S) VDS = 5V VG2S = Parameter 195 µA 4V Gate 1 forward transconductance gfs = ƒ(ID) VDS = 5V, VG2S = Parameter 45 mS 4V 165 150 135 3.5V 35 30 25 20 2.5V 3.5V 3V 2.5V 2V IG1 120 105 90 75 60 45 30 15 0 0 0.4 0.8 1.2 1.6 2 2.4 V 2V 3V gfs 15 10 5 0 0 3.2 4 8 12 16 20 24 28 32 mA 40 VG1S ID Drain current ID = ƒ(VG1S ) VDS = 5V VG2S = Parameter 28 mA 24 22 20 4V 3V Drain current ID = ƒ(VGG ) VDS = 5V, VG2S = 4V, RG1 = 80kΩ (connected to VGG, VGG=gate1 supply voltage) 16 mA 12 ID 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 1.5V 2V ID 18 10 8 6 4 2 2 0 0 1 2 3 V 5 VG1S VGG 5 2007-06-01 BF2040... Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 28 mA 24 22 120 70 80 90 dBµV Crossmodulation Vunw = (AGC) VDS = 5 V 110 ID 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 V Vunw 20 110 130 105 100 95 90 85 8 80 0 5 10 15 20 25 30 35 40 dB 50 VGG=VDS AGC 6 2007-06-01 BF2040... Cossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 4n7 2.2 uH 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 7 2007-06-01 Package SOT143 BF2040... Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 8 2007-06-01 Package SOT143R BF2040... Package Outline B 0.15 MIN. 2.9 ±0.1 1.9 4 3 1 ±0.1 0.1 MAX. 2.4 ±0.15 1 2 0.2 +0.1 0.8 -0.05 10˚ MAX. 0.08...0.15 0.4 +0.1 -0.05 1.7 0.25 M 0˚... 8˚ 0.2 M A B Foot Print 0.8 1.2 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 0.9 1.1 0.9 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 2.6 8 1.15 10˚ MAX. 1.3 ±0.1 A 9 2007-06-01 Package SOT343 BF2040... Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.6 +0.1 -0.05 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 10 2007-06-01 BF2040... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2007-06-01