BF2040W

BF2040... Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF2040 BF2040R BF2040W Maximum Ratings Parameter Package SOT143 SOT143 SOT343 1=S 1=D 1=D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking NFs NFs NF Symbol VDS ID ±IG1/2SM +VG1SE Ptot Value 8 20 10 7 200 200 Unit V mA V mW Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF2040, BF2040R TS ≤ 94 °C, BF2040W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF2040, BF2040R BF2040W Tstg Tch Symbol Rthchs -55 ... 150 150 °C Value ≤ 370 ≤ 280 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-25-2004 BF2040... Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA VG2S(p) 0.3 0.7 VG1S(p) 0.3 0.6 V IDSX 15 mA IDSS 50 µA +IG2SS 50 +IG1SS 50 nA +V(BR)G2SS 6 15 +V(BR)G1SS 6 15 V(BR)DS 10 V Symbol min. Values typ. max. Unit 2 Feb-25-2004 BF2040... Electrical Characteristics Parameter Symbol min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, I D = 15 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 1 MHz Power gain VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, I D = 15 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4 ...0 V , f = 800 GHz ∆G p 45 50 F 1.6 2.2 dB Gp 20 23 dB Cdss 1.6 Cg1ss 2.9 3.4 pF gfs 37 42 mS Values typ. max. Unit 3 Feb-25-2004 BF2040... Total power dissipation Ptot = ƒ(TS) BF2040, BFD2040R Total power dissipation Ptot = ƒ(TS) BF2040W 220 mW 220 mA 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Drain current ID = ƒ(IG1) VG2S = 4V 28 mA 24 22 20 Output characteristics ID = ƒ(V DS) VG2S = 4 V VG1S = Parameter 26 mA 22 20 18 1.3V 1.4V ID ID 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 µA 16 14 12 10 8 6 4 2 1V 1.1V 1.2V 90 0 0 1 2 3 4 5 6 7 8 V 10 IG1 VDS 4 Feb-25-2004 BF2040... Gate 1 current IG1 = ƒ(V G1S) VDS = 5V VG2S = Parameter 195 µA 4V Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter 45 mS 4V 165 150 135 3.5V 35 30 25 20 2.5V 3.5V 3V 2.5V 2V I G1 120 105 90 75 60 45 30 15 0 0 0.4 0.8 1.2 1.6 2 2.4 V 2V 3V g fs 15 10 5 0 0 3.2 4 8 12 16 20 24 28 32 mA 40 VG1S ID Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter 28 mA 24 22 20 4V 3V Drain current ID = ƒ(V GG) VDS = 5V, VG2S = 4V, RG1 = 80kΩ (connected to VGG, V GG=gate1 supply voltage) 16 mA 12 ID 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 1.5V 2V ID 18 10 8 6 4 2 2 0 0 1 2 3 V 5 VG1S VGG 5 Feb-25-2004 BF2040... Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 28 mA 24 22 20 90 70 80 ID 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 V 110 130 8 VGG=VDS 6 Feb-25-2004