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BF5020R

BF5020R

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BF5020R - Silicon N-Channel MOSFET Tetrode - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BF5020R 数据手册
BF5020... Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 4 1 2 Drain AGC HF Input G2 G1 R G1 VGG HF Output + DC GND EHA07461 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF5020 BF5020R BF5020W Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S Pin Configuration 3 = G2 4 = G1 3 = G1 4 = G2 3 = G1 4 = G2 - Marking KYs KYs KYs Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Storage temperature Channel temperature Tstg Tch Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot 200 200 -55 ... 150 150 °C Value 8 25 ± 10 ±6 Unit V mA mA V mW 1 2009-10-01 BF5020... Thermal Resistance Parameter Channel - soldering point 1) BF5020, BF5020R BF5020W Symbol Rthchs ≤ 370 ≤ 280 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA, VG1S = 2 V 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol min. V(BR)DS +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) 12 6 6 - Values typ. 14 0.7 0.7 max. 15 15 50 50 100 - Unit V nA mA V 2 2009-10-01 BF5020... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V Power gain VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Noise figure VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Gain control range VDS = 5 V, V G2S = 4...0 V Cross-modulation1), VDS = 5 V, RG1 = 120 kΩ AGC = 0 AGC = 10 dB AGC = 40 dB 1Input Values typ. 34 2.4 1 max. - Unit g fs Cg1ss Cdss Gp - mS pF dB 26 32 dB 1.2 0.8 45 dBµV 98 96 106 - F ∆G p Xmod - level for k = 1%; fw = 50 MHz, funw = 60 MHz 3 2009-10-01 BF5020... Total power dissipation Ptot = ƒ(TS) BF5020W Total power dissipation Ptot = ƒ(TS) BF5020, BF5020R 220 mA 220 mW 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Output characteristics ID = ƒ(V DS) Gate 1 current IG1 = ƒ(V G1S) VDS = 5V VG2S = Parameter 20 mA 1.5V 180 µA 16 14 1.4V 140 120 100 80 IG1 ID 12 1.3V 10 8 6 1.1V 1.2V 4V 3.5V 3V 2.5V 2V 60 40 20 0 0 4 2 0 0 V 2 4 6 8 12 0.5 1 1.5 2 V 3 VDS VG1S 4 2009-10-01 BF5020... Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter 50 mS 4V Drain current ID = ƒ(V G1S) VDS = 5V VG2S = Parameter 30 mA 40 35 3V 24 22 g fs 30 25 20 15 10 5 0 0 1.5V 2V ID 20 18 16 14 12 10 8 6 4 2 4V 3V 2V 1.5 V 1V 5 10 15 20 25 30 35 mA 45 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V 1.8 ID VG1S Drain current ID = ƒ(VGG ) VDS = 5V, VG2S = 4V, RG1 = 120 kΩ (connected to VGG, VGG =gate1 supply voltage) 16 mA Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 24 mA 68K 20 12 18 16 82K 100K 120K ID ID 10 14 12 10 150K 180K 8 6 8 4 6 4 2 2 0 0 1 2 3 V 5 0 0 1 2 3 4 V 6 VGG VGG=VDS 5 2009-10-01 BF5020... Drain current ID = ƒ(VG2S) VDS = 5 V, RG1 = Parameter in kΩ 28 mA 24 22 20 82K AGC characteristic AGC = ƒ(V G2S) f = 50 MHz measured in test circuit, see page 7 0 dB Rg=120KOHm Rg=82KOHm -20 120K ID 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 AGC V -30 -40 -50 -60 -70 2.5 3 4 -80 0.5 1 1.5 2 2.5 3 V 4 VG2S VG2S AGC characteristic AGC = ƒ(VG2S) f = 800 MHz measured in test circuit, see page 7 0 dB -10 -15 Crossmodulation Vunw = (AGC) VDS = 5 V measured in test circuit, see page 7 107 dBµV RG1=82KOHm_22m Rg1=120KOHm Rg1=82KOHm 104 103 Vunw -20 AGC -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0.5 1 1.5 2 2.5 3 V 102 101 100 99 98 97 96 95 94 93 RG1=120KOHm_15m 4 92 0 5 10 15 20 25 30 35 40 dB 50 VG2S AGC 6 2009-10-01 BF5020... Test circuit for Crossmodulation / AGC VAGC VDS 4n7 R1 10kΩ 4n7 2.2 uH 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 7 2009-10-01 Package SOT143 BF5020... Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 8 2009-10-01 Package SOT143R BF5020... Package Outline B 0.15 MIN. 2.9 ±0.1 1.9 4 3 1 ±0.1 0.1 MAX. 2.4 ±0.15 1 2 0.2 +0.1 0.8 -0.05 10˚ MAX. 0.08...0.15 0.4 +0.1 -0.05 1.7 0.25 M 0˚... 8˚ 0.2 M A B Foot Print 0.8 1.2 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 0.9 1.1 0.9 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 2.6 8 1.15 10˚ MAX. 1.3 ±0.1 A 9 2009-10-01 Package SOT343 BF5020... Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 10 2009-10-01 BF5020... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2009-10-01
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