BF5030R

BF5030... Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V operations and power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 3 4 1 2 Drain AGC HF Input G2 G1 R G1 VGG HF Output + DC GND EHA07461 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF5030 BF5030R BF5030W Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking KXs KXs KXs 1 2009-05-05 BF5030... Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 94 °C, BF5030W TS ≤ 76 °C, BF5030, BF5030R Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF5030W BF5030, BF5030R 1For Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot Value 8 25 ±1 ±6 200 200 Unit V mA mA V mW Tstg Tch Symbol Rthchs -55 ... 150 150 °C Value ≤ 280 ≤ 370 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2009-05-05 BF5030... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 3 V, VG1S = 0 , VG2S = 3 V VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 3 V, VG2S = 3 V, RG1 = 82 kΩ VDS = 5 V, VG2S = 4 V, RG1 = 180 kΩ Gate1-source pinch-off voltage VDS = 3 V, VG2S = 3 V, ID = 20 µA VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 3 V, VG1S = 3 V, ID = 20 µA VDS = 5 V, VG1S = 4 V, ID = 20 µA VG2S(p) 0.7 0.7 VG1S(p) 0.7 0.7 IDSX 13 13 V IDSS 100 100 mA +IG2SS 50 +IG1SS 50 nA +V(BR)G2SS 6 15 +V(BR)G1SS 6 15 V(BR)DS 12 V Symbol min. Values typ. max. Unit 3 2009-05-05 BF5030... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 3 V, I D = 10 mA, VG2S = 3 V VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 3 V, I D = 10 mA, VG2S = 3 V VDS = 5 V, I D = 10 mA, VG2S = 4 V Output capacitance VDS = 3 V, I D = 10 mA, VG2S = 3 V VDS = 5 V, I D = 10 mA, VG2S = 4 V Power gain VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Noise figure VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Gain control range VDS = 3 V, V G2S = 3...0 V , f = 800 MHz VDS = 5 V, V G2S = 4...0 V , f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 AGC = 10 dB AGC = 40 dB ∆G p 45 45 90 96 50 50 94 92 98 dB F 1.3 0.9 1.3 0.9 Gp 24 34 24 34 dB Cdss 1.6 1.5 dB Cg1ss 2.7 2.8 gfs 41 41 pF mS Values typ. max. Unit 4 2009-05-05 BF5030... Total power dissipation Ptot = ƒ(TS) BF5030W Total power dissipation Ptot = ƒ(TS) BF5030, BF5030R 220 mA 220 mW 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Drain current ID = ƒ(IG1)  VDS = 3 V, VG2S = 3 V … VDS = 5 V, VG2S = 4 V 35 mA Output characteristics ID = ƒ(V DS) VG1S = Parameter  VDS = 3 V, … VDS = 5 V 22 mA 1.4V 1.4V 1.3V 18 25 16 ID ID 14 12 10 8 1.2V 1.2V 1.3V 20 15 10 6 4 2 1V 1V 5 0 0 10 20 30 µA 50 0 0 2 4 6 8 V 12 IG1 VDS 5 2009-05-05 BF5030... Gate 1 current IG1 = ƒ(V G1S) VG2S = Parameter  VDS = 3 V, … VDS = 5 V 200 Gate 1 forward transconductance g fs = ƒ(ID),V G2S = Parameter  VDS = 3 V, … VDS = 5 V 60 mS 3V 4V 3V 2.5V µA 4V 50 45 I G1 3.5V Gfs 3V 40 35 30 25 20 15 10 5 1.5V 1.5V 2V 2V 100 3V 2.5V 2.5V 50 2V 2V 0 0 0.5 1 1.5 2 V 3 0 0 5 10 15 20 25 30 mA ID 40 VG1S Drain current ID = ƒ(VG1S) VG2S = Parameter  VDS = 3 V, … VDS = 5 V 32 mA 4V 3V 3V 2V 2.5V Drain current ID = ƒ(V GG)  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 14 mA 24 10 ID ID 8 1.5V 20 16 6 12 1.5V 8 1V 1V 4 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V 1.8 0 0 1 2 3 V 5 VG1S VGG 6 2009-05-05 BF5030... Drain current ID = ƒ(VGG) RG1 = Parameter in kΩ  VDS = 3 V, … VDS = 5 V 26 mA 68k 100k 120k 82k Power gain Gps = ƒ (VG2S), f = 45 MHz  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 40 22 20 18 dB ID 16 14 12 10 8 6 4 2 0 0 1 2 3 100k 120k 150k 180k G ps 20 10 0 -10 4 V 6 -20 0 1 2 V 4 VGG=VDS VG2S Noise figure F = ƒ (VG2S), f = 45 MHz  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 8 Noise figure F = ƒ (VG2S), f = 800 MHz  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 8 dB dB F 4 F 4 2 2 0 0 V 1 2 4 0 0 1 2 V 4 VG2S VG2S 7 2009-05-05 BF5030... Power gain Gps = ƒ (VG2S), f = 800 MHz  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 30 dB dBµV Crossmodulation Vunw = (AGC)  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 115 20 V unw V VG2 15 Gps 105 10 5 0 -5 -10 -15 -20 0 100 95 90 0.5 1 1.5 2 2.5 3 4 85 0 5 10 15 20 25 30 35 40 dB 50 AGC 8 2009-05-05 BF5030... Crossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 4n7 2.2 uH 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 9 2009-05-05 Package SOT143 BF5030... Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 10 2009-05-05 Package SOT143R BF5030... Package Outline B 0.15 MIN. 2.9 ±0.1 1.9 4 3 1 ±0.1 0.1 MAX. 2.4 ±0.15 1 2 0.2 +0.1 0.8 -0.05 10˚ MAX. 0.08...0.15 0.4 +0.1 -0.05 1.7 0.25 M 0˚... 8˚ 0.2 M A B Foot Print 0.8 1.2 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 0.9 1.1 0.9 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 2.6 8 1.15 10˚ MAX. 1.3 ±0.1 A 11 2009-05-05 Package SOT343 BF5030... Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 12 2009-05-05 BF5030... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 2009-05-05