BF517

BF 517 NPN Silicon RF Transistor For amplifier and oscillator applications in TV-tuners 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point to the pcb S  Total power dissipation, TS

2 1 VPS05161 Type BF 517 Maximum Ratings Parameter Marking LRs 1=B Pin Configuration 2=E Symbol VCEO VCBO VEBO IC Package SOT-23 Value 15 20 2.5 25 50 280 150 -65 ... 150 -65 ... 150 mW °C mA Unit V 3=C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f 10 MHz 55 °C F) ICM Ptot Tj TA Tstg
340 K/W 1 Oct-26-1999 BF 517 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 15 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat 0.1 0.5 hFE 25 250 ICBO 50 V(BR)CEO 15 typ. max. Unit V nA V AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, F 2.5 dB Cobs 0.8 Cibo 1.45 Cce 0.25 0.4 Ccb 0.3 0.55 0.75 pF fT 1 2 GHz
2 Oct-26-1999 ZS = 75 BF 517 Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 300 mW TS P tot 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Oct-26-1999 BF 517 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.3 pF 3.0 1.1 1.0 GHz 10V 5V 3V Ccb 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16 20 V 2.0 fT 2V 1.5 1.0 0.5 1V 0.7V 26 0.0 0 5 10 15 20 mA 30 VCB IC 4 Oct-26-1999