BF543
Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF543
Maximum Ratings Parameter Drain-source voltage Drain current
Storage temperature Ambient temperature range Channel temperature
Thermal Resistance Channel - soldering point1) Rthchs
1For calculation of R thJA please refer to Application Note Thermal Resistance
Total power dissipation, TS
76 °C
1
Gate-source peak current
2 1
VPS05161
Marking LDs 1=G
Pin Configuration 2=D 3=S
Package SOT23
Symbol VDS ID IGSM Ptot Tstg TA Tch
Value 20 30 10 200 -55 ... 150 -55 ... 150 150
Unit V mA mW °C
370
K/W
Jun-28-2001
BF543
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V IGS = 10 mA, VDS = 0 VGS = 6 V, VDS = 0
Symbol min. V(BR)DS V(BR)GSS IGSS 20 7 2 -
Values typ. 4 0.7 max. 12 50 6 1.5
Unit
V
Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA
AC characteristics Forward tranconductance VDS = 10 V, I D = 4 mA Gate input capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Reverse tranfer capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Output capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Power gain (test circuit) GG = 2mS, GL = 0,5 mS VDS = 10 V, I D = 4 mA, f = 200 MHz Noise figure (test circuit) GG = 2mS, GL = 0,5 mS VDS = 10 V, I D = 4 mA, f = 200 MHz
2
Gate-source leakage current
Gate-source breakdown voltage
nA mA V
IDSS - VGS (p)
gfs Cgss Cdg Cdss Gp
9.5 -
12 2.7 18 0.9 22
-
mS pF fF pF dB
F
-
1
-
Jun-28-2001
BF543
Total power dissipation Ptot = f(TS)
Output characteristics ID = f (VDS)
300
10
BF 543
EHT07026
mW
ΙD
VGS = 0.4 V mA 8
P tot
200
0.2 V 6
150
4
100
0V
2
50
-0.2 V
-0.4 V
0 0 20 40 60 80 100 120 °C 150
0
0
10
V V DS
20
TS
Gate transconductance gfs = f (VGS)
VDS = 10, IDSS = 4mA, f = 1kHz
15 g fs mS
BF 543 EHT07027
Drain current ID = f (VGS)
VDS = 10V
10
BF 543 EHT07028
Ι D mA
8
10 6
4 5 2
0 -0.1
0
V VGS
0.1
0 -0.1
0
V VGS
0.1
3
Jun-28-2001
BF543
Gate input capacitance Cgss = f (VGS )
VDS = 10, IDSS = 4mA, f = 1MHz
5 Cgss pF 4
BF 543 EHT07029
Output capacitance C dss = f (V DS)
VGS = 0, IDSS = 4mA, f = 1MHz
5 Cdss pF 4
BF 543 EHT07030
3
3
2
2
1
1
0 -0.1
0
V VGS
0.1
0
0
5
10
V VDS
15
Reverse transfer capacitance
Cdg = f (VDS) VGS = 0, IDSS = 4mA, f = 1MHz
50 Cdg fF 40
BF 543 EHT07031
Gate input admittance y 11s
VDS = 10, IDSS = 4mA, V GS = 0
(source circuit)
15 b 11s mS
f = 800 MHz 700 MHz BF 543 EHT07032
10
30
600 MHz 500 MHz
20
5
400 MHz 300 MHz
10
200 MHz
100 MHz 50 MHz
0
0
5
10
V VDS
15
0
0
0.1
0.2
0.3
0.4 mS 0.5 g 11s
4
Jun-28-2001
BF543
Gate forward transfer admittance y21s
VDS = 10V, IDSS = 4mA, VGS = 0 (source circuit)
0 b 21s mS
BF 543 EHT07033
Output admittance y 22s
VDS = 10V, I DSS = 10mA, VGS = 0
(source circuit)
5 b 22s mS 4
BF 543 EHT07034
50 MHz
f = 800 MHz
100 MHz
700 MHz
600 MHz
3
200 MHz
500 MHz
-5
400 MHz
300 MHz
2
300 MHz
400 MHz
1
500 MHz 600 MHz
200 MHz 100 MHz
-10
700 MHz
f = 800 MHz
50 MHz
0
5
10
mS 15 g 21s
0
0
0.1
0.2
0.3
0.4 mS 0.5 g 22s
5
Jun-28-2001
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