BF543

BF543 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Storage temperature Ambient temperature range Channel temperature Thermal Resistance Channel - soldering point1) Rthchs 1For calculation of R thJA please refer to Application Note Thermal Resistance  Total power dissipation, TS 76 °C 1 
Gate-source peak current 

2 1 VPS05161 Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID IGSM Ptot Tstg TA Tch Value 20 30 10 200 -55 ... 150 -55 ... 150 150 Unit V mA mW °C
370 K/W Jun-28-2001 BF543 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V IGS = 10 mA, VDS = 0 VGS = 6 V, VDS = 0
Symbol min. V(BR)DS V(BR)GSS IGSS 20 7 2 - Values typ. 4 0.7 max. 12 50 6 1.5 Unit V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC characteristics Forward tranconductance VDS = 10 V, I D = 4 mA Gate input capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Reverse tranfer capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Output capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Power gain (test circuit) GG = 2mS, GL = 0,5 mS VDS = 10 V, I D = 4 mA, f = 200 MHz Noise figure (test circuit) GG = 2mS, GL = 0,5 mS VDS = 10 V, I D = 4 mA, f = 200 MHz 2
Gate-source leakage current

Gate-source breakdown voltage


nA mA V IDSS - VGS (p) gfs Cgss Cdg Cdss Gp 9.5 - 12 2.7 18 0.9 22 - mS pF fF pF dB F - 1 - Jun-28-2001 BF543 Total power dissipation Ptot = f(TS) Output characteristics ID = f (VDS) 300 10 BF 543 EHT07026 mW ΙD VGS = 0.4 V mA 8 P tot 200 0.2 V 6 150 4 100 0V 2 50 -0.2 V -0.4 V 0 0 20 40 60 80 100 120 °C 150 0 0 10 V V DS 20 TS Gate transconductance gfs = f (VGS) VDS = 10, IDSS = 4mA, f = 1kHz 15 g fs mS BF 543 EHT07027 Drain current ID = f (VGS) VDS = 10V 10 BF 543 EHT07028 Ι D mA 8 10 6 4 5 2 0 -0.1 0 V VGS 0.1 0 -0.1 0 V VGS 0.1 3 Jun-28-2001 BF543 Gate input capacitance Cgss = f (VGS ) VDS = 10, IDSS = 4mA, f = 1MHz 5 Cgss pF 4 BF 543 EHT07029 Output capacitance C dss = f (V DS) VGS = 0, IDSS = 4mA, f = 1MHz 5 Cdss pF 4 BF 543 EHT07030 3 3 2 2 1 1 0 -0.1 0 V VGS 0.1 0 0 5 10 V VDS 15 Reverse transfer capacitance Cdg = f (VDS) VGS = 0, IDSS = 4mA, f = 1MHz 50 Cdg fF 40 BF 543 EHT07031 Gate input admittance y 11s VDS = 10, IDSS = 4mA, V GS = 0 (source circuit) 15 b 11s mS f = 800 MHz 700 MHz BF 543 EHT07032 10 30 600 MHz 500 MHz 20 5 400 MHz 300 MHz 10 200 MHz 100 MHz 50 MHz 0 0 5 10 V VDS 15 0 0 0.1 0.2 0.3 0.4 mS 0.5 g 11s 4 Jun-28-2001 BF543 Gate forward transfer admittance y21s VDS = 10V, IDSS = 4mA, VGS = 0 (source circuit) 0 b 21s mS BF 543 EHT07033 Output admittance y 22s VDS = 10V, I DSS = 10mA, VGS = 0 (source circuit) 5 b 22s mS 4 BF 543 EHT07034 50 MHz f = 800 MHz 100 MHz 700 MHz 600 MHz 3 200 MHz 500 MHz -5 400 MHz 300 MHz 2 300 MHz 400 MHz 1 500 MHz 600 MHz 200 MHz 100 MHz -10 700 MHz f = 800 MHz 50 MHz 0 5 10 mS 15 g 21s 0 0 0.1 0.2 0.3 0.4 mS 0.5 g 22s 5 Jun-28-2001