BF771W

BF771W

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BF771W - NPN Silicon RF Transistor - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BF771W 数据手册
BF771W NPN Silicon RF Transistor For modulators and amplifiers in TV and VCR tuners 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance   2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF771W Maximum Ratings Parameter Marking RBs 1=B Pin Configuration 2=E 3=C Package SOT323 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 80 10 580 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 63 °C 1) mA mW °C  150 K/W 1 Jun-27-2001 BF771W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BF771W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 13.5 7.5 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Gma 15.5 10 F 1.3 2.1 Ceb 1.8 Cce 0.28 Ccb 0.74 1 fT 6 8 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 )  3 Jun-27-2001
BF771W
1. 物料型号: - 型号:BF771W

2. 器件简介: - BF771W是一款NPN硅射频晶体管,适用于电视和VCR调谐器中的调制器和放大器。

3. 引脚分配: - 引脚配置如下: - 1 = B(基极) - 2 = E(发射极) - 3 = C(集电极) - 封装类型:SOT323

4. 参数特性: - 最大额定值: - 集电极-发射极电压(VCEO):未提供具体数值 - 集电极-发射极电压(VCES):20V - 集电极-基极电压(VCBO):未提供具体数值 - 发射极-基极电压(VEBO):2V - 集电极电流(Ic):未提供具体数值(单位:mA) - 基极电流(/B):未提供具体数值 - 总功率耗散(Ptot):580mW(Ts ≤ 63°C) - 结温(Tj):150°C - 环境温度(TA):-65...150°C - 存储温度(Tstg):-65...150°C - 热阻(RthJs):≤150 K/W(结到焊接点)

5. 功能详解: - 直流特性: - 集电极-发射极击穿电压(V(BR)CEO):12V - 集电极-发射极截止电流(ICES):100A - 集电极-基极截止电流(ICBO):100nA - 发射极-基极截止电流(EBO):1A - 直流电流增益(hFE):50至200 - 交流特性: - 过渡频率(f):6至8GHz - 集电极-基极电容(Ccb):0.74至1pF - 集电极-发射极电容(Cce):0.28pF - 发射极-基极电容(Ceb):1.8pF - 噪声系数(F):1.3至2.1dB - 最大可用功率增益(Gma):15.5至10 - 传感器增益:13.5至7.5

6. 应用信息: - 适用于电视和VCR调谐器中的调制器和放大器。

7. 封装信息: - 封装类型:SOT323
BF771W 价格&库存

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