BF799W_07

BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz • SAW filter driver in TV tuners • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type BF799W Maximum Ratings Parameter Marking LKs 1=B Pin Configuration 2=E 3=C Package SOT323 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Tstg Value 20 30 30 3 35 10 280 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS = 107 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 2) 1Pb-containing 2For RthJS ≤ 155 K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-20 BF799W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Base-emitter breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBEsat 0.95 VCEsat hFE 35 40 95 100 0.1 250 0.3 V ICBO 100 nA V(BR)EBO 3 V(BR)CBO 30 V(BR)CEO 20 V Symbol min. Values typ. max. Unit AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz Output capacitance VCB = 10 V, IE = 0 mA, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, ZS = 50 Ω Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz g22e 60 µS F 3 dB Cce 0.28 Ccb 0.7 Cob fT 800 1100 0.96 pF MHz 2 2007-04-20 BF799W Total power dissipation Ptot = f (TS) 300 mW 240 220 Ptot 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax /PtotDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 2007-04-20 BF799W Transition frequency fT = f (IC) f = 100MHz BF 799 EHT07116 Collector-base capacitance Ccb = f (VCB) f = 1 MHz BF 799 EHT07117 1200 fT MHz 1000 1.5 Ccb pF VCE = 5 V 800 1.0 600 2V 400 0.5 200 0 0 10 20 30 40 mA 50 0 0 10 V VCB 20 ΙC 4 2007-04-20 Package SOT323 BF799W Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 5 2007-04-20 BF799W Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-20