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BF850BF

BF850BF

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BF850BF - NPN Silicon AF Transistors - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BF850BF 数据手册
BC846...-BC850... NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 1Pb-containing package may be available upon special request 1 2007-04-20 BC846...-BC850... Type BC846A BC846B BC846BW BC847A BC847B BC847BF BC847BL3 BC847BT BC847BW BC847C BC847CW BC848A BC848AW BC848B BC848BF BC848BL3 BC848BW BC848C BC848CW BC849B BC849BF BC849C BC849CW BC850B BF850BF BC850BW BC850C BC850CW Marking 1As 1Bs 1Bs 1Es 1Fs 1Fs 1F 1F 1Fs 1Gs 1Gs 1Js 1Js 1Ks 1Ks 1K 1Ks 1Ls 1Ls 2Bs 2Bs 2Cs 2Cs 2Fs 2Fs 2Fs 2Gs 2Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT323 SOT23 SOT23 TSFP-3 TSLP-3-1 SC75 SOT323 SOT23 SOT323 SOT23 SOT323 SOT23 TSFP-3 TSLP-3-1 SOT323 SOT23 SOT323 SOT23 TSFP-3 SOT23 SOT323 SOT23 TSFP-3 SOT323 SOT23 SOT323 2 2007-04-20 BC846...-BC850... Maximum Ratings Parameter Collector-emitter voltage BC846... BC847..., BC850... BC848..., BC849... Collector-emitter voltage BC846... BC847..., BC850... BC848..., BC849... Collector-base voltage BC846... BC847..., BC850... BC848..., BC849... Emitter-base voltage BC846... BC847..., BC850... BC848..., BC849... Collector current Peak collector current Total power dissipationTS ≤ 71 °C, BC846-BC850 TS ≤ 128 °C, BC847F-BC850F TS ≤ 135 °C, BC847L3-BC848L3 TS ≤ 109 °C, BC847T TS ≤ 124 °C, BC846W-BC850W Junction temperature Storage temperature Tj Tstg IC ICM Ptot 330 250 250 250 250 150 -65 ... 150 °C VEBO 6 6 6 100 200 mW mA VCBO 80 50 30 VCES 80 50 30 Symbol VCEO 65 45 30 Value Unit V 3 2007-04-20 BC846...-BC850... Thermal Resistance Parameter Junction - soldering point 1) BC846-BC850 BC847F-BC850F BC847L3-BC848L3 BC847T BC846W-BC850W 1For Symbol RthJS Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 4 2007-04-20 BC846...-BC850... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC846... IC = 10 mA, IB = 0 , BC847..., BC850... IC = 10 mA, IB = 0 , BC848..., BC849... 65 45 30 V(BR)CBO - - Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC846... IC = 10 µA, IE = 0 , BC847..., BC850... IC = 10 µA, IE = 0 , BC848..., BC849... 80 50 30 V(BR)EBO I CBO 6 µA Emitter-base breakdown voltage IE = 0 , IC = 10 µA - Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C h FE 0.015 5 140 250 480 180 290 520 220 450 800 mV DC current gain1) IC = 10 µA, VCE = 5 V, hFE-grp.A IC = 10 µA, VCE = 5 V, hFE-grp.B IC = 10 µA, VCE = 5 V, hFE-grp.C IC = 2 mA, VCE = 5 V, hFE-grp.A IC = 2 mA, VCE = 5 V, hFE-grp.B IC = 2 mA, VCE = 5 V, hFE-grp.C 110 200 420 VCEsat Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat 90 200 700 900 660 - 250 600 700 770 Base emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBE(ON) Base-emitter voltage1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1Pulse test: t < 300µs; D < 2% 580 - 5 2007-04-20 BC846...-BC850... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C Noise figure IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ, BC849..., BC850... Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 10 ... 50 Hz , BC850... Vn 0.135 µV F h22e 18 30 60 1.2 4 dB h21e 200 330 600 µS h12e 1.5 2 3 h11e 2.7 4.5 8.7 10-4 kΩ Ceb 9 fT Ccb 250 0.95 MHz pF Symbol min. Values typ. max. Unit 6 2007-04-20 BC846...-BC850... DC current gain hFE = ƒ(IC) VCE = 5 V 10 3 EHP00365 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 20 10 2 EHP00367 h FE 5 100 C 25 C ΙC mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 5 0 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.1 0.2 0.3 0.4 ΙC V 0.5 VCEsat Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 20 10 2 EHP00364 Collector cutoff current ICBO = ƒ(TA) VCB = 30 V 10 4 EHP00415 Ι C mA 100 C 25 C -50 C Ι CB0 nA max 10 3 5 10 1 5 10 2 5 typ 10 0 5 10 5 1 10 -1 10 0 0 0.2 0.4 0.6 0.8 V 1.2 0 50 100 ˚C TA 150 V BEsat 7 2007-04-20 BC846...-BC850... Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz EHP00363 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 13 pF 11 fT 5 CCB/C EB 10 9 8 7 6 5 CEB 10 2 5 4 3 2 1 CCB 10 1 10 -1 5 10 0 5 10 1 mA 10 2 0 0 4 8 12 16 V 22 ΙC VCB/VEB Total power dissipation Ptot = ƒ(TS) BC846-BC850 Total power dissipation Ptot = ƒ(TS) BC847BF-BC850BF 360 300 mW mW 300 270 250 225 Ptot 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 Ptot 240 200 175 150 125 100 75 50 25 °C 150 TS 0 0 15 30 45 60 75 90 105 120 °C 150 TS 8 2007-04-20 BC846...-BC850... Total power dissipation Ptot = ƒ(TS) BC847BL3/BC848BL3 Total power dissipation Ptot = ƒ(TS) BC847BT 300 mW 300 mW 250 225 250 225 P tot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 200 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BC846W-BC850W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC846/W-BC850/W 10 3 Ptot max Ptot DC tp D= T tp T EHP00362 300 mW 250 225 Ptot 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 TS 9 2007-04-20 BC846...-BC850... Permissible Puls Load RthJS = ƒ (tp) BC847BF-BC850BF 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC847BF-BC850BF 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 P totmax/P totDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BC847BL3, BC848BL3 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC847BL3, BC848BL3 10 3 Ptotmax/ PtotDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 10 2007-04-20 BC846...-BC850... Permissible Puls Load RthJS = ƒ (tp) BC847BT 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC847BT 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Noise figure F = ƒ(VCE) IC = 0.2mA, RS = 2kΩ , f = 1kHz BC 846...850 EHP00370 Noise figure F = ƒ(f) IC = 0.2 mA, VCE = 5V, RS = 2 kΩ BC 846...850 EHP00371 20 20 dB F dB F 15 15 10 10 5 5 0 10 -1 5 10 0 10 1 V VCE 10 2 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 11 2007-04-20 BC846...-BC850... Noise figure F = ƒ(IC ) VCE = 5V, f = 120Hz BC 846...850 EHP00372 Noise figure F = ƒ(I C) VCE = 5V, f = 1kHz BC 846...850 EHP00373 20 dB 20 dB F 15 RS = 1 MΩ 100 k Ω 10 k Ω F 15 RS = 1 MΩ 10 100 k Ω 10 k Ω 10 500 Ω 1 kΩ 5 1 kΩ 5 500 Ω 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC Noise figure F = ƒ(IC ) VCE = 5V, f = 10kHz BC 846...850 EHP00374 20 dB F 15 R S = 1 MΩ 100 kΩ 10 500 Ω 10 k Ω 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC 12 2007-04-20 Package SC75 BC846...-BC850... Package Outline 1.6 ±0.2 0.2 +0.1 -0.05 A 3 1.6 ±0.2 0.1 MAX. 0.7 ±0.1 0.2 +0.1 -0.05 0.5 0.10 1 2 0.15 ±0.05 0.5 M 0.2 M A Foot Print 0.4 0.65 0.65 0.4 0.5 0.5 Marking Layout (Example) 1.15 2005, December Date code Pin 1 BCR108T Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.45 0.2 MAX. 1.4 Pin 1 1.75 1.8 8 0.9 10˚ MAX. 0.8 ±0.1 10˚ MAX. 13 2007-04-20 BC846...-BC850... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code M onth 2 0 03 01 02 03 04 05 06 07 08 09 10 11 12 a b c d e f g h j k l n 2 0 04 p q r s t u v x y z 2 3 2005 A B C D E F G H J K L N 2006 P Q R S T U V X Y Z 4 5 2 0 07 a b c d e f g h j k l n 2008 p q r s t u v x y z 2 3 2009 A B C D E F G H J K L N 2010 P Q R S T U V X Y Z 4 5 2011 a b c d e f g h j k l n 2012 p q r s t u v x y z 2 3 2 0 13 A B C D E F G H J K L N 2014 P Q R S T U V X Y Z 4 5 1 ) New Marking Layout for SC75, implemented at October 2005. . 14 2007-04-20 Package SOT23 BC846...-BC850... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 15 2007-04-20 Package SOT323 BC846...-BC850... Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 16 2007-04-20 Package TSFP-3 BC846...-BC850... Package Outline 1.2 ±0.05 10˚ MAX. 0.8 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 0.4 0.45 3 0.55 ±0.04 1 2 0.2 ±0.05 0.4 ±0.05 0.4 ±0.05 0.15 ±0.05 Foot Print 0.4 0.4 Marking Layout (Example) Manufacturer 1.05 Pin 1 BCR847BF Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.3 1.2 1.5 8 0.2 Pin 1 1.35 0.7 17 2007-04-20 Package TSLP-3-1 BC846...-BC850... Package Outline Top view Bottom view 0.6 ±0.05 0.5 ±0.035 0.65 ±0.05 1) 0.05 MAX. 3 2 1 ±0.05 3 1 2 1 2 x 0.25 ±0.035 0.45 1) Pin 1 marking 0.35 ±0.05 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.275 0.6 0.35 0.35 0.945 0.3 1 0.355 0.2 0.225 0.225 0.15 Copper Solder mask R0.1 0.2 0.17 Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 0.5 1.16 Pin 1 marking 0.76 8 0.315 0.25 ±0.035 0.4 +0.1 1) 18 2007-04-20 BC846...-BC850... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 19 2007-04-20
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