BF998

BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF998 BF998R Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 - Marking MOs MRs Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation TS ≤ 76 °C, BF998, BF998R Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point2), BF998, BF998R 1Pb-containing 2For Symbol VDS ID ±IG1/2SM Ptot Tstg Tch Symbol Rthchs Value 12 30 10 200 -55 ... 150 150 Unit V mA °C Value ≤ 370 Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-20 BF998... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±V G2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) 0.8 2 -VG1S(p) 0.8 2.5 V IDSS 5 9 15 mA ±IG2SS 50 nA ±IG1SS 50 nA ±V (BR)G2SS 8 12 ±V (BR)G1SS 8 12 V(BR)DS 12 V Symbol min. Values typ. max. Unit 2 2007-04-20 BF998... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Symbol min. (verified by random sampling) gfs Cg1ss 20 24 2.1 2.5 pF Forward transconductance VDS = 8 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Gate 2 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Feedback capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Power gain VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 8 V, V G2S = 4 ...-2 V, f = 800 MHz ∆G p 40 1.8 50 2.8 F 20 dB 28 Gp dB Cdss 1.1 pF Cdg1 25 fF Cg2ss 1.2 pF Values typ. max. Unit 3 2007-04-20 BF998... Total power dissipation Ptot = ƒ(TS) BF998, BF998R Output characteristics ID = ƒ(V DS) VG2S = 4 V VG1S = Parameter 220 mW 26 mA 22 0.4V 180 20 160 18 0.2V P tot ID 140 120 100 80 60 16 0V 14 12 10 8 6 -0.4V -0.2V 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 4 2 0 0 2 4 6 8 10 V 14 TS VDS Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter 26 mS 4V Gate 1 forward transconductance g fs1 = ƒ (VG1S) 26 mS 4V 22 20 18 16 14 12 10 8 6 4 2 0 0 0V 1V 2V 22 20 18 2V Gfs gfs 16 14 12 10 8 6 4 2 0V 1V 4 8 12 16 mA 24 0 -1 -0.75 -0.5 -0.25 0 0.25 V 0.75 ID VG1S 4 2007-04-20 BF998... Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter 30 4V 2V mA dB Power gain Gps = ƒ (VG2S) f = 45 MHz 30 ID 1V 15 G ps 20 20 15 10 0V 10 5 5 0 -1 -0.75 -0.5 -0.25 0 0.25 0.5 V 1 0 0 1 2 V 4 VG1S VG2S Noise figure F = ƒ (VG2S) f = 45 MHz Noise figure F = ƒ (VG2S) f = 800 MHz 10 dB 5 8 7 6 5 4 3 2 1 0 0 dB 3 F F V 2 1 1 2 4 0 0 1 2 V 4 VG2S VG2S 5 2007-04-20 BF998... Power gain Gps = ƒ (VG2S) f = 800 MHz Gate 1 input capacitance Cg1ss = ƒ (VG1S) 20 2.6 pF dB 2.2 G ps 10 Cg1ss V 2 5 1.8 1.6 0 1.4 -5 1.2 -10 0 1 2 4 1 -3 -2.6 -2.2 -1.8 -1.4 -1 -0.6 V 0.2 VG2S VG1S Output capacitance C dss = ƒ(VDS) 4 pF 3 Cdss 2.5 2 1.5 1 0.5 0 0 2 4 6 8 V 12 VDS 6 2007-04-20 Package SOT143 BF998... Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 7 2007-04-20 Package SOT143R BF998... Package Outline B 0.15 MIN. 2.9 ±0.1 1.9 4 3 1 ±0.1 0.1 MAX. 2.4 ±0.15 1 2 0.2 +0.1 0.8 -0.05 10˚ MAX. 0.08...0.15 0.4 +0.1 -0.05 1.7 0.25 M 0˚... 8˚ 0.2 M A B Foot Print 0.8 1.2 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 0.9 1.1 0.9 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 2.6 8 1.15 10˚ MAX. 1.3 ±0.1 A 8 2007-04-20 BF998... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-04-20