BF998W

BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R BF998W SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - MOs MRs MR Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation TS ≤ 76 °C, BF998, BF998R TS ≤ 94 °C, BF998W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF998, BF998R BF998W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VDS ID ±IG1/2SM Ptot Value 12 30 10 200 200 Unit V mA Tstg Tch Symbol Rthchs -55 ... 150 150 °C Value ≤ 370 ≤ 280 Unit K/W 1 Feb-13-2004 BF998... Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±V G2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) 0.8 2 -VG1S(p) 0.8 2.5 V IDSS 5 9 15 mA ±IG2SS 50 nA ±IG1SS 50 nA ±V (BR)G2SS 8 12 ±V (BR)G1SS 8 12 V(BR)DS 12 V Symbol min. Values typ. max. Unit 2 Feb-13-2004 BF998... Electrical Characteristics Parameter AC Characteristics Forward transconductance VDS = 8 V, I D = 10 mA, VG2S = 4 V gfs Cg1ss Symbol min. 20 - Values typ. 24 2.1 max. 2.5 Unit pF Gate1 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Cg2ss - 1.2 - pF Feedback capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Cdg1 - 25 - fF Output capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Cdss - 1.1 - pF Power gain VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gp dB 28 20 dB 2.8 1.8 50 - Noise figure VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz F Gain control range VDS = 8 V, V G2S = 4 ...-2 V, f = 800 MHz ∆G p 40 3 Feb-13-2004 BF998... Total power dissipation Ptot = ƒ(TS) BF998, BF998R Total power dissipation Ptot = ƒ(TS) BF998W 220 mA 220 mA 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Output characteristics ID = ƒ(V DS) VG2S = 4 V VG1S = Parameter 26 mA 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V -0.4V -0.2V 0V 0.2V 0.4V Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter 26 mS 4V 22 20 18 2V gfs ID 16 14 12 10 8 6 4 2 0V 1V 14 0 0 4 8 12 16 mA 24 VDS ID 4 Feb-13-2004 BF998... Gate 1 forward transconductance g fs1 = ƒ (VG1S) 26 mS 4V Drain current ID = ƒ(V G1S) VDS = 5V VG2S = Parameter 30 4V 2V mA 22 20 18 2V G fs 20 16 14 12 10 8 6 4 2 0 -1 -0.75 -0.5 -0.25 0 0.25 0V 1V ID 1V 15 10 0V 5 V 0.75 0 -1 -0.75 -0.5 -0.25 0 0.25 0.5 V 1 VG1S VG1S Power gain Gps = ƒ (VG2S) f = 45 MHz 30 Noise figure F = ƒ (VG2S) f = 45 MHz 10 dB dB 8 7 6 5 4 10 3 2 1 0 0 V Gps 20 15 5 F 1 2 4 0 0 1 2 V 4 VG2S VG2S 5 Feb-13-2004 BF998... Power gain Gps = ƒ (VG2S) f = 800 MHz 20 Power gain Gps = ƒ (VG2S) f = 800 MHz 20 dB dB G ps 5 G ps V 10 10 5 0 0 -5 -5 -10 0 1 2 4 -10 0 1 2 V 4 VG2S VG2S Gate 1 input capacitance Cg1ss = ƒ (VG1S) Output capacitance C dss = ƒ(VDS) 2.6 pF pF 4 2.2 3 Cg1ss 2 Cdss V 2.5 1.8 2 1.6 1.5 1.4 1 1.2 0.5 1 -3 -2.6 -2.2 -1.8 -1.4 -1 -0.6 0.2 0 0 2 4 6 8 V 12 VG1S VDS 6 Feb-13-2004