BFG135A

BFG 135A NPN Silicon RF Transistor For low-distortion broadband amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHz 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point to the pcb S




3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 135A Maximum Ratings Parameter Marking BFG135A 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES VCBO VEBO IC IB 100 °C F) Ptot Tj TA Tstg Value 15 25 25 2 150 20 1 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS mA W °C
50 K/W 1 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V hFE 80 120 250 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 100 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 30 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available F) IC = 100 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , IP3 , 10 4 38 IC = 100 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Third order intercept point IC = 100 mA, VCE = 8 V, ZS = ZL= 50 f = 900 MHz 14 9 Gma F 2 3.7 Ceb 7.5 Cce 0.8 Ccb 1.3 1.8 fT 4.5 6 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2)
dBm
3 Oct-26-1999 BFG 135A Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 1200 mW 1000 900 TS TA P tot 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C Kei 150 n TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W Ptotmax / PtotDC - 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Oct-26-1999 BFG 135A Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 4.0 pF 7.0 GHz 10V 6.0 5.5 5.0 5V 3V 2V 3.0 Ccb 2.5 fT 4.5 4.0 2.0 3.5 3.0 1V 1.5 2.5 2.0 1.5 1.0 0.5 0.7V 1.0 0.5 0.0 0 4 8 12 16 V 22 0.0 0 20 40 60 80 100 120 140 mA 170 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 16 dB 10V 5V 3V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 11 dB 9 8 10V 5V 3V 12 2V G G 10 7 2V 6 8 1V 5 6 0.7V 4 3 2 1V 4 2 1 20 40 60 80 100 120 140 mA 170 0 0 20 40 60 80 100 120 0.7V 0 0 140 mA 170 IC IC 5 Oct-26-1999 BFG 135A Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 15 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 45 IC=100mA 0.9GHz dBm 10V 8V 12 11 10 0.9GHz 1.8GHz 35 G 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 IP 3 30 3V 25 20 1V 15 V 12 10 0 20 40 60 80 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) V CE = Parameter 30 IC=100mA dB dB IC =100mA 20 G S21 20 15 15 10 10 5 10V 5 2V 1V 0.7V 0 0.7 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 -5 0.0 0.5 1.0 1.5 f 6
5V 2V 100 120 mA 160 IC 2V 10V 2.0 GHz 3.0 f Oct-26-1999