BFG193

BFG193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance



3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG193 Maximum Ratings Parameter Marking BFG193 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 80 10 600 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 87 °C 1) mA mW °C
105 K/W 1 Jun-27-2001 BFG193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFG193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 13.5 8 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Gma 15.5 10 F 1.3 2.1 Ceb 2 Cce 0.4 Ccb 0.6 0.9 fT 6 8 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 )
3 Jun-27-2001 BFG193 Total power dissipation Ptot = f (TS ) 700 mW 600 550 500 P tot 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-27-2001 BFG193 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.3 pF 9.0 GHz 10V 1.1 1.0 7.0 5V Ccb 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1.0 0.1 0.0 0 4 8 12 16 V fT 6.0 5.0 4.0 3.0 1V 3V 2V 2.0 0.7V 22 0.0 0 10 20 30 40 50 60 70 mA 90 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 12 10V dB 5V 3V 16 10V 5V G G 14 3V 8 2V 12 2V 6 10 4 8 1V 1V 2 6 0.7V 0.7V 4 0 10 20 30 40 50 60 70 mA 90 0 0 10 20 30 40 50 60 70 mA 90 IC IC 5 Jun-27-2001 BFG193 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 35 IC=30mA dB 0.9GHz 8V 0.9GHz dBm 5V 1.8GHz 14 12 G IP 3 25 10 1.8GHz 8 20 6 4 2 0 0 10 0 2V 15 1V 2 4 6 8 V 12 10 20 30 40 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) V CE = Parameter 32 dB IC=30mA dB IC =30mA 26 25 22 G S21 20 18 14 15 10 10 10V 2V 1V 0.7V 6 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 -2 0.0 0.5 1.0 1.5 2.0 f 6
3V 50 60 mA 80 IC 10V 2V 1V 0.7V 2.5 GHz 3.5 f Jun-27-2001