BFG196

BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN Systems fT = 7.5 GHz F = 1.5 dB at 900 GHz 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance



3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG196 Maximum Ratings Parameter Marking BFG196 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 100 12 800 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 90 °C 1) mA mW °C
75 K/W 1 Jun-27-2001 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 11.5 6 IC = 50 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Gma 14 8.5 F 1.5 2.5 Ceb 4 Cce 0.4 Ccb 0.97 1.4 fT 5 7.5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 )
3 Jun-27-2001 BFG196 Total power dissipation Ptot = f (TS ) 900 mW 700 P tot 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W Ptotmax / PtotDC - 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-27-2001 BFG196 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 1.9 pF 9 GHz 10V 5V 1.6 7 1.4 3V 2V Ccb 6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 fT 5 4 3 0.7V 1V 2 1 0 0 4 8 12 16 V 22 20 40 60 80 mA 120 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 15 dB 10V 5V 3V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 10 dB 5V 3V 13 2V 8 2V 12 G 11 10 9 8 1V G 7 6 5 1V 4 7 6 5 0 0.7V 3 0.7V 20 40 60 80 mA 120 2 0 20 40 60 80 mA 120 IC IC 5 Jun-27-2001 BFG196 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 16 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 42 dBm IC=50mA dB 0.9GHz 38 0.9GHz 36 34 12 IP 3 G 10 32 30 28 3V 1.8GHz 8 1.8GHz 26 24 22 2V 6 4 20 2 18 16 0 0 2 4 6 8 V 1V 12 14 0 20 40 60 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 dB Power Gain |S21|2= f(f) V CE = Parameter 30 IC=50mA dB IC =50mA 26 24 22 20 G 20 18 16 S21 15 10 14 12 10 8 6 4 2 0.0 0.5 1.0 1.5 2.0 2.5 10V 1V 0.7V GHz 5 10V 1V 0.7V 0 3.5 -5 0.0 0.5 1.0 1.5 2.0 f 6
8V 5V 80 mA 120 IC 2.5 GHz 3.5 f Jun-27-2001