BFG235

BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point to the pcb S




3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 235 Maximum Ratings Parameter Marking BFG235 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES VCBO VEBO IC IB 80 °C F) Ptot Tj TA Tstg Value 15 25 25 2 300 40 2 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS mA W °C
35 K/W 1 Oct-27-1999 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 200 mA, VCE = 8 V hFE 50 120 250 IEBO 2 µA ICBO 100 nA ICES 200 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Oct-27-1999 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 200 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 60 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz Power gain, maximum available F) IC = 200 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Transducer gain f = 900 MHz Third order intercept point IC = 200 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz |S21e|2 , IP3 , 40 6 IC = 200 mA, VCE = 8 V, ZS = ZL = 50 Gma 12 F 2.7 Ceb 15 Cce 1.5 Ccb 2.6 3.6 fT 4 5.5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 )

dBm 3 Oct-27-1999 BFG 235 Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 2200 mW 1800 1600 TS P tot 1400 1200 1000 800 600 400 200 0 0 20 40 60 80 100 120 °C 150 TA TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W Ptotmax / PtotDC - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Oct-27-1999 BFG 235 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 7 6.0 GHz 5V pF 5.0 5 4.5 Ccb 1V fT 4 3 4.0 3.5 3.0 2.5 2.0 0.7V 2 1 1.5 0 0 V 4 8 12 16 22 1.0 0 50 100 150 200 mA 300 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 13 dB 10V 5V 3V 2V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 9 dB 10V 5V 11 7 6 3V 2V G G 5 4 10 9 1V 1V 8 3 7 2 0.7V 6 0.7V 1 0 0 5 0 50 100 150 200 mA 300 50 100 150 200 mA 300 IC IC 5 Oct-27-1999 BFG 235 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 14 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 42 dBm IC=200mA 0.9GHz dB 36 10 34 5V G IP 3 32 30 28 26 24 22 2V 3V 8 1.8GHz 0.9GHz 6 4 20 18 2 16 14 0 0 2 4 6 8 V 12 12 0 50 100 150 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) V CE = Parameter 30 IC=200mA dB IC =200mA dB 20 S21 20 G 15 15 10 10 10V 2V 1V 0.7V 5 0 5 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 -10 0.0 0.5 1.0 1.5 2.0 f 6
10V 8V 1V 200 mA 300 IC 10V 2V 1V 0.7V 2.5 GHz 3.5 f Oct-27-1999