BFN16

BFN16, BFN18 NPN Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN17, BFN19 (PNP) 1 2 3 Type BFN16 BFN18 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS



2 VPS05162 Marking DD DE 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E Package SOT89 SOT89 Symbol VCEO VCBO VEBO BFN16 250 250 5 BFN18 300 300 5 Unit V IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 1 150 -65 ... 150 mA W °C
20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN16, BFN18 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA hFE ICBO V(BR)CEO Symbol min. Values typ. max. Unit V 250 300 nA 100 100 µA 20 20 100 nA 25 40 V 0.4 0.5 0.9 BFN16 BFN18 V(BR)CBO BFN16 BFN18 V(BR)EBO 250 300 5 BFN16 BFN18 ICBO BFN16 BFN18 IEBO - BFN16 BFN18 VCEsat 40 30 BFN16 BFN18 VBEsat - 1) Pulse test: t < 300 s; D < 2%
2 Nov-30-2001 BFN16, BFN18 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb 2.5 fT 70 typ. max. Unit MHz pF 3 Nov-30-2001 BFN16, BFN18 Total power dissipation Ptot = f(TS) Operating range I C = f (VCEO) TA = 25°C, D = 0 10 3 mA BFN 16/18 EHP00580 1.2 W ΙC 10 2 10 µ s 100 µ s 1ms 100 ms DC P tot 0.8 5 0.6 10 1 5 0.4 10 0 0.2 5 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 -1 10 0 5 10 1 5 10 2 V5 V CEO 10 3 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BFN 16/18 EHP00581 Collector current I C = f (VBE) VCE = 10V 10 3 mA BFN 16/18 EHP00582 D= tp T tp ΙC T 10 2 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 0 0.5 1.0 V BE V 1.5 4 Nov-30-2001 BFN16, BFN18 Transition frequency fT = f (IC) VCE = 10V 10 3 BFN 16/18 EHP00583 Collector cutoff current ICBO = f (T A) VCB = 200V 10 4 nA 10 3 5 10 2 5 10 1 5 10 0 5 typ BFN 16/18 EHP00584 fT MHz max Ι CBO 10 2 5 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 10 -1 0 50 100 TA ˚C 150 ΙC DC current gain hFE = f (IC ) VCE = 10V 10 3 5 h FE 10 2 5 BFN 16/18 EHP00585 10 1 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001