BFN17

BFN17, BFN19 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN16, BFN18 (NPN) 1 2 3



2 VPS05162 Type BFN17 BFN19 Maximum Ratings Parameter Marking DG DH 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E Package SOT89 SOT89 Symbol VCEO VCBO VEBO BFN17 250 250 5 BFN19 300 300 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 1 150 -65 ... 150 mA W °C Thermal Resistance Junction - soldering point1) RthJS
20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN17, BFN19 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA BFN17 BFN19 VBEsat BFN17 BFN19 VCEsat 0.4 0.5 0.9 hFE 25 40 40 30 BFN17 BFN19 IEBO BFN17 BFN19 ICBO 20 20 100 ICBO 100 100 BFN17 BFN19 V(BR)EBO BFN17 BFN19 V(BR)CBO 250 300 5 V(BR)CEO 250 300 typ. max. Unit V nA µA nA - V 1) Pulse test: t < 300 s; D < 2%
2 Nov-30-2001 BFN17, BFN19 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb 2.5 fT 100 typ. max. Unit MHz pF 3 Nov-30-2001 BFN17, BFN19 Total power dissipation Ptot = f(TS) Operating range I C = f (VCEO) TA = 25°C, D = 0 10 3 mA BFN 17/19 EHP00587 1.2 W Ι C 10 2 P tot 0.8 10 µ s 5 100 µ s 1 ms 100 ms DC 0.6 10 1 5 0.4 10 0 0.2 5 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 -1 0 10 5 10 1 5 10 2 V5 V CEO 10 3 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BFN 17/19 EHP00588 Collector current I C = f (VBE) VCE = 10V 10 3 mA BFN 17/19 EHP00589 D= tp T tp ΙC T 10 2 10 2 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 5 1 10 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 0 0.5 1.0 V BE V 1.5 4 Nov-30-2001 BFN17, BFN19 Transition frequency fT = f (IC) VCE = 10V 10 3 MHz fT BFN 17/19 EHP00590 Collector cutoff current ICBO = f (T A) VCB = 200V 10 4 nA 10 3 5 10 2 5 10 1 5 10 0 5 typ BFN 17/19 EHP00591 max Ι CBO 10 2 5 10 1 10 0 5 10 1 5 10 2 mA 5 ΙC 10 3 10-1 0 50 100 TA ˚C 150 DC current gain hFE = f (IC ) VCE = 10V 10 3 5 h FE 10 2 5 2 10 1 5 BFN 17/19 EHP00592 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001