BFN24_07

BFN24, BFN26 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BFN27 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type BFN24 BFN26 Maximum Ratings Parameter Collector-emitter voltage BFN24 BFN26 Collector-base voltage BFN24 BFN26 Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 74 °C Junction temperature Storage temperature 1Pb-containing Marking FHs FJs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO Value 250 300 Unit V VCBO 250 300 VEBO IC ICM IB IBM Ptot Tj Tstg 6 200 500 100 200 360 150 -65 ... 150 mW °C mA package may be available upon special request 1 2007-04-20 BFN24, BFN26 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 210 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 , BFN24 IC = 1 mA, IB = 0 , BFN26 250 300 V(BR)CBO - µA Collector-base breakdown voltage IC = 100 µA, IE = 0 , BFN24 IC = 100 µA, IE = 0 , BFN26 250 300 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 6 Collector-base cutoff current VCB = 200 V, IE = 0 , BFN24 VCB = 250 V, IE = 0 , BFN26 VCB = 200 V, IE = 0 , T A = 150 °C, BFN24 VCB = 250 V, IE = 0 , T A = 150 °C, BFN26 I EBO h FE - 0.1 0.1 20 20 100 nA - Emitter-base cutoff current VEB = 5 V, IC = 0 - DC current gain2) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V, BFN24 IC = 30 mA, VCE = 10 V, BFN26 25 40 40 30 VCEsat - V Collector-emitter saturation voltage2) IC = 20 mA, IB = 2 mA, BFN24 IC = 20 mA, IB = 2 mA, BFN26 VBEsat - 0.4 0.5 0.9 Base emitter saturation voltage 2) IC = 20 mA, IB = 2 mA 1For - calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2Pulse 2 2007-04-20 BFN24, BFN26 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT Ccb Symbol min. - Values typ. 70 1.5 max. - Unit MHz pF Collector-base capacitance VCB = 30 V, f = 1 MHz 3 2007-04-20 BFN24, BFN26 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 5 h FE 2 10 2 5 BFN 24/26 EHP00627 Operating range I C = ƒ(VCEO) TA = 25°C, D = 0 10 3 mA BFN 24/26 EHP00624 ΙC 10 2 5 10 µs 100 µs 1 ms 100 ms 10 1 2 10 1 5 2 10 0 -1 10 5 10 0 5 500 ms DC 10 0 5 5 10 1 5 10 2 mA 10 3 10 -1 10 0 5 10 1 5 10 2 V5 V CEO 10 3 ΙC Collector current I C = ƒ(VBE) VCE = 10 V 10 3 mA BFN 24/26 EHP00625 Collector cutoff current ICBO = ƒ(TA) VCB = 200 V 10 4 nA BFN 24/26 EHP00626 ΙC 10 2 5 Ι CB0 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 max 10 1 5 typ 10 0 5 10 -1 0 0.5 1.0 V BE V 1.5 0 50 100 TA ˚C 150 4 2007-04-20 BFN24, BFN26 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 MHz CCB(C EB) BFN 24/26 EHP00622 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 90 pF fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 0 0 4 8 12 16 V 22 ΙC VCB(VEB) Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 400 10 3 Ptot max 5 Ptot DC BFN 24/26 EHP00623 mW D= tp T tp T 300 Ptot 10 2 250 5 200 150 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 5 2007-04-20 Package SOT23 BFN24, BFN26 Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 6 2007-04-20 BFN24, BFN26 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-20