BFN25

BFN25, BFN27 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN24, BFN26 (NPN) 3



2 1 VPS05161 Type BFN25 BFN27 Maximum Ratings Parameter Marking FKs FLs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BFN25 250 250 5 BFN27 300 300 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 360 150 -65 ... 150 mA mW °C Thermal Resistance Junction - soldering point1) RthJS
210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN25, BFN27 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA BFN25 BFN27 VBEsat BFN25 BFN27 VCEsat 0.4 0.5 0.9 hFE 25 40 40 30 BFN25 BFN27 IEBO BFN25 BFN27 ICBO 20 20 100 ICBO 100 100 BFN25 BFN27 V(BR)EBO BFN25 BFN27 V(BR)CBO 250 300 5 V(BR)CEO 250 300 typ. max. Unit V nA µA nA - V 1) Pulse test: t < 300 s; D < 2%
2 Nov-30-2001 BFN25, BFN27 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb 2.5 fT 100 typ. max. Unit MHz pF 3 Nov-30-2001 BFN25, BFN27 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 10 3 MHz fT BFN 25/27 EHP00629 400 mW 300 P tot 250 200 10 2 150 5 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 ΙC Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BFN 25/27 EHP00630 Operating range I C = f (VCEO) TA = 25°C, D = 0 10 3 mA BFN 25/27 EHP00631 D= tp T tp ΙC T 10 2 10 2 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 µs 10 5 1 100 µs 1 ms 100 ms DC 500 ms 10 1 5 10 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 10 0 5 10 1 5 10 2 V5 V CEO 10 3 4 Nov-30-2001 BFN25, BFN27 Collector current IC = f (VBE) VCE = 10 V 10 3 mA BFN 25/27 EHP00632 Collector cutoff current ICBO = f (T A) VCB = 200V 10 4 nA 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 typ BFN 25/27 EHP00633 ΙC 10 2 5 Ι CBO max 10 1 5 10 0 5 10 -1 0 0.5 1.0 V BE V 1.5 0 50 100 ˚C 150 TA DC current gain hFE = f (IC ) VCE = 10V 10 3 5 h FE 10 2 5 BFN 25/27 EHP00634 10 1 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001